Abstract
This paper presents an empirical equation-based DC device model of GaN-on-Si high electron-mobility transistors (HEMTs), amenable for applications in high performance integrated circuit design into power converters. The output current and the derived trans-conductance based on the fitted equation coefficients were compared with the measured data of the GaN HEMT. A linear regulator design based on the investigated GaN devices was used to validate the derived model.
Original language | English |
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Title of host publication | 2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781728132792 |
DOIs | |
State | Published - 05 2019 |
Externally published | Yes |
Event | 6th IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019 - Yilan, Taiwan Duration: 20 05 2019 → 22 05 2019 |
Publication series
Name | 2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019 |
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Conference
Conference | 6th IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019 |
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Country/Territory | Taiwan |
City | Yilan |
Period | 20/05/19 → 22/05/19 |
Bibliographical note
Publisher Copyright:© 2019 IEEE.