An Empirical GaN HEMT DC Model for Power Converters

Ting Chieh Lin, Deng Fong Lu, Chin Hsia

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This paper presents an empirical equation-based DC device model of GaN-on-Si high electron-mobility transistors (HEMTs), amenable for applications in high performance integrated circuit design into power converters. The output current and the derived trans-conductance based on the fitted equation coefficients were compared with the measured data of the GaN HEMT. A linear regulator design based on the investigated GaN devices was used to validate the derived model.

Original languageEnglish
Title of host publication2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728132792
DOIs
StatePublished - 05 2019
Externally publishedYes
Event6th IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019 - Yilan, Taiwan
Duration: 20 05 201922 05 2019

Publication series

Name2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019

Conference

Conference6th IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019
Country/TerritoryTaiwan
CityYilan
Period20/05/1922/05/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

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