An Empirical GaN HEMT DC Model for Power Converters

Ting Chieh Lin; Deng Fong Lu; Chin Hsia

doi:10.1109/ICCE-TW46550.2019.8991880

An Empirical GaN HEMT DC Model for Power Converters

Ting Chieh Lin
, Deng Fong Lu
, Chin Hsia

National Central University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

This paper presents an empirical equation-based DC device model of GaN-on-Si high electron-mobility transistors (HEMTs), amenable for applications in high performance integrated circuit design into power converters. The output current and the derived trans-conductance based on the fitted equation coefficients were compared with the measured data of the GaN HEMT. A linear regulator design based on the investigated GaN devices was used to validate the derived model.

Original language	English
Title of host publication	2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728132792
DOIs	https://doi.org/10.1109/ICCE-TW46550.2019.8991880
State	Published - 05 2019
Externally published	Yes
Event	6th IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019 - Yilan, Taiwan Duration: 20 05 2019 → 22 05 2019

Publication series

Name	2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019

Conference

Conference	6th IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019
Country/Territory	Taiwan
City	Yilan
Period	20/05/19 → 22/05/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

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10.1109/ICCE-TW46550.2019.8991880

Cite this

Lin, T. C., Lu, D. F., & Hsia, C. (2019). An Empirical GaN HEMT DC Model for Power Converters. In 2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019 Article 8991880 (2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICCE-TW46550.2019.8991880

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title = "An Empirical GaN HEMT DC Model for Power Converters",

abstract = "This paper presents an empirical equation-based DC device model of GaN-on-Si high electron-mobility transistors (HEMTs), amenable for applications in high performance integrated circuit design into power converters. The output current and the derived trans-conductance based on the fitted equation coefficients were compared with the measured data of the GaN HEMT. A linear regulator design based on the investigated GaN devices was used to validate the derived model.",

author = "Lin, \{Ting Chieh\} and Lu, \{Deng Fong\} and Chin Hsia",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 6th IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019 ; Conference date: 20-05-2019 Through 22-05-2019",

year = "2019",

month = may,

doi = "10.1109/ICCE-TW46550.2019.8991880",

language = "英语",

series = "2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019",

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}

Lin, TC, Lu, DF & Hsia, C 2019, An Empirical GaN HEMT DC Model for Power Converters. in 2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019., 8991880, 2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019, Institute of Electrical and Electronics Engineers Inc., 6th IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019, Yilan, Taiwan, 20/05/19. https://doi.org/10.1109/ICCE-TW46550.2019.8991880

An Empirical GaN HEMT DC Model for Power Converters. / Lin, Ting Chieh; Lu, Deng Fong; Hsia, Chin.
2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8991880 (2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - This paper presents an empirical equation-based DC device model of GaN-on-Si high electron-mobility transistors (HEMTs), amenable for applications in high performance integrated circuit design into power converters. The output current and the derived trans-conductance based on the fitted equation coefficients were compared with the measured data of the GaN HEMT. A linear regulator design based on the investigated GaN devices was used to validate the derived model.

AB - This paper presents an empirical equation-based DC device model of GaN-on-Si high electron-mobility transistors (HEMTs), amenable for applications in high performance integrated circuit design into power converters. The output current and the derived trans-conductance based on the fitted equation coefficients were compared with the measured data of the GaN HEMT. A linear regulator design based on the investigated GaN devices was used to validate the derived model.

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T3 - 2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019

BT - 2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019

Y2 - 20 May 2019 through 22 May 2019

ER -

An Empirical GaN HEMT DC Model for Power Converters

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