An improved 0.25µm GaN on sic MMIC technology for radar and 5G Applications

Yi Wei Lien; Wayne Lin; Jhih Han Du; Richard Jhan; Andy Tseng; Wei Chou Wang; Fan Hsiu Huang; Clement Huang; Shinichiro Takatani; Walter Wohlmuth

An improved 0.25µm GaN on sic MMIC technology for radar and 5G Applications

Yi Wei Lien^*, Wayne Lin, Jhih Han Du, Richard Jhan, Andy Tseng, Wei Chou Wang, Fan Hsiu Huang, Clement Huang, Shinichiro Takatani, Walter Wohlmuth

^*Corresponding author for this work

WIN Semiconductors Corp.

Research output: Contribution to conference › Conference Paper › peer-review

2 Scopus citations

Abstract

An improved 0.25µm GaN HEMT technology has been created by optimizing the fabrication process and the epitaxial layer structure. The pulsed I-V characteristics have been improved with typical gate-lag and drain-lag of 16% and 6%, respectively. The transistor for RF power amplifier use has the small signal gain improved by 1.8dB up to 20.3dB, the power density 3dB into compression increased from 4.2 to 4.7W/mm, and the maximum power-added efficiency improved from 59.6% to 64.7% at 10GHz. The transistor for RF switch use exhibits switching speed of 13.1ns on falling edge and 35.8ns on the rising edge of output signal. The changes to the process have resulted in enhanced HTRB reliability performance with a signature of leakage current being significantly suppressed over time providing stable and reliable operation.

Original language	English
State	Published - 2018
Externally published	Yes
Event	2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018 - Austin, United States Duration: 07 05 2018 → 10 05 2018

Conference

Conference	2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018
Country/Territory	United States
City	Austin
Period	07/05/18 → 10/05/18

Bibliographical note

Publisher Copyright:
© 2018 GaAs Mantech Incorporated. All Rights Reserved.

Keywords

0.25µm
5G
AlGaN/GaN
GaN on SiC
High electron mobility transistor

Cite this

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title = "An improved 0.25µm GaN on sic MMIC technology for radar and 5G Applications",

abstract = "An improved 0.25µm GaN HEMT technology has been created by optimizing the fabrication process and the epitaxial layer structure. The pulsed I-V characteristics have been improved with typical gate-lag and drain-lag of 16% and 6%, respectively. The transistor for RF power amplifier use has the small signal gain improved by 1.8dB up to 20.3dB, the power density 3dB into compression increased from 4.2 to 4.7W/mm, and the maximum power-added efficiency improved from 59.6% to 64.7% at 10GHz. The transistor for RF switch use exhibits switching speed of 13.1ns on falling edge and 35.8ns on the rising edge of output signal. The changes to the process have resulted in enhanced HTRB reliability performance with a signature of leakage current being significantly suppressed over time providing stable and reliable operation.",

keywords = "0.25µm, 5G, AlGaN/GaN, GaN on SiC, High electron mobility transistor",

author = "Lien, {Yi Wei} and Wayne Lin and Du, {Jhih Han} and Richard Jhan and Andy Tseng and Wang, {Wei Chou} and Huang, {Fan Hsiu} and Clement Huang and Shinichiro Takatani and Walter Wohlmuth",

note = "Publisher Copyright: {\textcopyright} 2018 GaAs Mantech Incorporated. All Rights Reserved.; 2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018 ; Conference date: 07-05-2018 Through 10-05-2018",

year = "2018",

language = "英语",

}

TY - CONF

T1 - An improved 0.25µm GaN on sic MMIC technology for radar and 5G Applications

AU - Lien, Yi Wei

AU - Lin, Wayne

AU - Du, Jhih Han

AU - Jhan, Richard

AU - Tseng, Andy

AU - Wang, Wei Chou

AU - Huang, Fan Hsiu

AU - Huang, Clement

AU - Takatani, Shinichiro

AU - Wohlmuth, Walter

PY - 2018

Y1 - 2018

N2 - An improved 0.25µm GaN HEMT technology has been created by optimizing the fabrication process and the epitaxial layer structure. The pulsed I-V characteristics have been improved with typical gate-lag and drain-lag of 16% and 6%, respectively. The transistor for RF power amplifier use has the small signal gain improved by 1.8dB up to 20.3dB, the power density 3dB into compression increased from 4.2 to 4.7W/mm, and the maximum power-added efficiency improved from 59.6% to 64.7% at 10GHz. The transistor for RF switch use exhibits switching speed of 13.1ns on falling edge and 35.8ns on the rising edge of output signal. The changes to the process have resulted in enhanced HTRB reliability performance with a signature of leakage current being significantly suppressed over time providing stable and reliable operation.

AB - An improved 0.25µm GaN HEMT technology has been created by optimizing the fabrication process and the epitaxial layer structure. The pulsed I-V characteristics have been improved with typical gate-lag and drain-lag of 16% and 6%, respectively. The transistor for RF power amplifier use has the small signal gain improved by 1.8dB up to 20.3dB, the power density 3dB into compression increased from 4.2 to 4.7W/mm, and the maximum power-added efficiency improved from 59.6% to 64.7% at 10GHz. The transistor for RF switch use exhibits switching speed of 13.1ns on falling edge and 35.8ns on the rising edge of output signal. The changes to the process have resulted in enhanced HTRB reliability performance with a signature of leakage current being significantly suppressed over time providing stable and reliable operation.

KW - 0.25µm

KW - 5G

KW - AlGaN/GaN

KW - GaN on SiC

KW - High electron mobility transistor

UR - http://www.scopus.com/inward/record.url?scp=85050029676&partnerID=8YFLogxK

M3 - 论文

AN - SCOPUS:85050029676

T2 - 2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018

Y2 - 7 May 2018 through 10 May 2018

ER -

An improved 0.25µm GaN on sic MMIC technology for radar and 5G Applications

Abstract

Conference

Bibliographical note

Keywords

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