An Improved Analytical Model for Short-Channel MOSFET's

Hwang Cherng Chow, Wu Shiung Feng

Research output: Contribution to journalJournal Article peer-review

11 Scopus citations


An analytical model for short-channel MOSFET's including all second-order effects is proposed with a significant improvement on the saturation region operation. This model requires no numerical iterations and describes channel-length modulations of submicrometer MOS devices more accurately than other existing models. In addition, the influence of both the source-drain resistance and short-channel effects on the lateral channel electric field is also investigated.

Original languageEnglish
Pages (from-to)2626-2629
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number11
StatePublished - 11 1992
Externally publishedYes


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