An Improved Analytical Model for Short-Channel MOSFET's

Hwang Cherng Chow; Wu Shiung Feng

doi:10.1109/16.163475

An Improved Analytical Model for Short-Channel MOSFET's

Hwang Cherng Chow, Wu Shiung Feng

National Taiwan University

Research output: Contribution to journal › Journal Article › peer-review

11 Scopus citations

Abstract

An analytical model for short-channel MOSFET's including all second-order effects is proposed with a significant improvement on the saturation region operation. This model requires no numerical iterations and describes channel-length modulations of submicrometer MOS devices more accurately than other existing models. In addition, the influence of both the source-drain resistance and short-channel effects on the lateral channel electric field is also investigated.

Original language	English
Pages (from-to)	2626-2629
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	39
Issue number	11
DOIs	https://doi.org/10.1109/16.163475
State	Published - 11 1992
Externally published	Yes

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title = "An Improved Analytical Model for Short-Channel MOSFET's",

abstract = "An analytical model for short-channel MOSFET's including all second-order effects is proposed with a significant improvement on the saturation region operation. This model requires no numerical iterations and describes channel-length modulations of submicrometer MOS devices more accurately than other existing models. In addition, the influence of both the source-drain resistance and short-channel effects on the lateral channel electric field is also investigated.",

author = "Chow, {Hwang Cherng} and Feng, {Wu Shiung}",

year = "1992",

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AB - An analytical model for short-channel MOSFET's including all second-order effects is proposed with a significant improvement on the saturation region operation. This model requires no numerical iterations and describes channel-length modulations of submicrometer MOS devices more accurately than other existing models. In addition, the influence of both the source-drain resistance and short-channel effects on the lateral channel electric field is also investigated.

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DO - 10.1109/16.163475

M3 - 文章

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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An Improved Analytical Model for Short-Channel MOSFET's

Abstract

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