An improved BSIM4 model for 0.13 μm RF CMOS using a simple lossy substrate extraction method

An improved BSIM4 large-signal model for a 0.13 μm RF CMOS transistor with lossy substrate description is presented in this article. To accurately accomplish the CMOS model for microwave circuit designs, the RLC networks representing the parasitic effects of layout and lossy substrate were added into the BSIM4 model. With the proposed simple extraction method for a lossy substrate, the lossy substrate networks can be constructed without any complicated calculations and curve-fitting procedures. A 0.13 μm gate-length NMOS transistor was measured and extracted through the extraction method in this work. According to the experimental results, good agreement has been realized between measured and modeled results up to 40 GHz in terms of device DC I-V, S-parameters, low-frequency noise and power characteristics.