An Integrated-Circuit Reliability Simulator—Rely

Bing J. Sheu; Wen Jay Hsu; Bang W. Lee

doi:10.1109/4.18612

An Integrated-Circuit Reliability Simulator—Rely

Bing J. Sheu
, Wen Jay Hsu
, Bang W. Lee

University of Southern California

Research output: Contribution to journal › Journal Article › peer-review

36 Scopus citations

Abstract

A prototype very large-scale integrated (VLSI) circuit reliability simulator is described. Software modules for hot-carrier effects have been developed. Popular substrate current models are implemented in the simulator. Experiments were performed to establish the relationship between transistor model parameter changes and the substrate current level. The circuit reliability simulation techniques can be extended to include dielectric breakdown and interconnect electromigration effects.

Original language	English
Pages (from-to)	473-477
Number of pages	5
Journal	IEEE Journal of Solid-State Circuits
Volume	24
Issue number	2
DOIs	https://doi.org/10.1109/4.18612
State	Published - 04 1989
Externally published	Yes

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10.1109/4.18612

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title = "An Integrated-Circuit Reliability Simulator—Rely",

abstract = "A prototype very large-scale integrated (VLSI) circuit reliability simulator is described. Software modules for hot-carrier effects have been developed. Popular substrate current models are implemented in the simulator. Experiments were performed to establish the relationship between transistor model parameter changes and the substrate current level. The circuit reliability simulation techniques can be extended to include dielectric breakdown and interconnect electromigration effects.",

author = "Sheu, \{Bing J.\} and Hsu, \{Wen Jay\} and Lee, \{Bang W.\}",

year = "1989",

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volume = "24",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Sheu, Bing J.

AU - Hsu, Wen Jay

AU - Lee, Bang W.

PY - 1989/4

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N2 - A prototype very large-scale integrated (VLSI) circuit reliability simulator is described. Software modules for hot-carrier effects have been developed. Popular substrate current models are implemented in the simulator. Experiments were performed to establish the relationship between transistor model parameter changes and the substrate current level. The circuit reliability simulation techniques can be extended to include dielectric breakdown and interconnect electromigration effects.

AB - A prototype very large-scale integrated (VLSI) circuit reliability simulator is described. Software modules for hot-carrier effects have been developed. Popular substrate current models are implemented in the simulator. Experiments were performed to establish the relationship between transistor model parameter changes and the substrate current level. The circuit reliability simulation techniques can be extended to include dielectric breakdown and interconnect electromigration effects.

UR - https://www.scopus.com/pages/publications/0024647841

U2 - 10.1109/4.18612

DO - 10.1109/4.18612

M3 - 文章

AN - SCOPUS:0024647841

SN - 0018-9200

VL - 24

SP - 473

EP - 477

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 2

ER -

An Integrated-Circuit Reliability Simulator—Rely

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