Abstract
The reliability of a micro-machined AlGaN/GaN/Si high electron mobility transistor (HEMT) device is studied using drain current low frequency noise measurements for various stress conditions. After removal of the Si substrate beneath the HEMT, a high quality 300 nm layer of SiO2 and a 20 μm copper layer are deposited to form the GaN-on-insulator structure. Compared to previous full substrate removal methods, the self-heating effect of the GaN HEMT under high current operation is overcome because there is a thick copper thermal sinking layer in the design. In addition, the traps at the buffer/transition interface are also eliminated, which is a dominant factor in device reliability after long-term stress.
Original language | English |
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Pages (from-to) | 117-120 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 114 |
DOIs | |
State | Published - 02 2014 |
Keywords
- HEMT
- Low frequency noise
- Micro-machined
- Pulse measurement
- Reliability GaN on insulator