An investigation of device reliability for a micro-machined AlGaN/GaN/Si high electron mobility transistor using low frequency noise measurement

Hsien Chin Chiu*, Hsiang Chun Wang, Chia Hsuan Wu, Fan Hsiu Huang, Hsuan Ling Kao, Feng Tso Chien

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

2 Scopus citations

Abstract

The reliability of a micro-machined AlGaN/GaN/Si high electron mobility transistor (HEMT) device is studied using drain current low frequency noise measurements for various stress conditions. After removal of the Si substrate beneath the HEMT, a high quality 300 nm layer of SiO2 and a 20 μm copper layer are deposited to form the GaN-on-insulator structure. Compared to previous full substrate removal methods, the self-heating effect of the GaN HEMT under high current operation is overcome because there is a thick copper thermal sinking layer in the design. In addition, the traps at the buffer/transition interface are also eliminated, which is a dominant factor in device reliability after long-term stress.

Original languageEnglish
Pages (from-to)117-120
Number of pages4
JournalMicroelectronic Engineering
Volume114
DOIs
StatePublished - 02 2014

Keywords

  • HEMT
  • Low frequency noise
  • Micro-machined
  • Pulse measurement
  • Reliability GaN on insulator

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