@inproceedings{b604d7ab3416434a841eb64f5f900f7e,
title = "An optoelectronic mixer based on composite transparent gate InAlAs/InGaAs metamorphic HEMT",
abstract = "In this work, we have fabricated the first transparent gate using sputtered ITO/Au/ITO composite films InAlAs/InGaAs metamorphic HEMT (CTG-MHEMT) on GaAs substrate. The CTG-MHEMT has been demonstrated to increase front side optical coupling efficiency as an optoelectronic mixer. By optimizing the bias condition, the optoelectronic mixing efficiency can be enhanced. The photodetection mechanism of CTG-MHEMT is clarified by investigating the internal photovoltaic gain (Gpv) and photoconductance gain (Gpc). For comparison of the optical characteristics, the transparent gate MHEMT (TG-MHEMT) has been fabricated. The CTG-MHEMT as an optoelectronic mixer is a promising candidate that can simplify the base station architecture in fiber-optic microwave transmission systems.",
keywords = "Indium tin oxide, Metamorphic high electron mobility transistor, Mixer, Photodetector, Phototransistor, Photovoltaic effect, Responsivity",
author = "Lin, {Che Kai} and Lin, {Chao Wei} and Wu, {Yi Chun} and Chiu, {Hsien Chin}",
year = "2010",
doi = "10.1109/ICIPRM.2010.5516402",
language = "英语",
isbn = "9781424459209",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "340--343",
booktitle = "2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings",
note = "22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 ; Conference date: 31-05-2010 Through 04-06-2010",
}
