An optoelectronic mixer based on composite transparent gate InAlAs/InGaAs metamorphic HEMT

Che Kai Lin; Chao Wei Lin; Yi Chun Wu; Hsien Chin Chiu

doi:10.1109/ICIPRM.2010.5516402

An optoelectronic mixer based on composite transparent gate InAlAs/InGaAs metamorphic HEMT

Che Kai Lin^*
, Chao Wei Lin
, Yi Chun Wu
, Hsien Chin Chiu

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, we have fabricated the first transparent gate using sputtered ITO/Au/ITO composite films InAlAs/InGaAs metamorphic HEMT (CTG-MHEMT) on GaAs substrate. The CTG-MHEMT has been demonstrated to increase front side optical coupling efficiency as an optoelectronic mixer. By optimizing the bias condition, the optoelectronic mixing efficiency can be enhanced. The photodetection mechanism of CTG-MHEMT is clarified by investigating the internal photovoltaic gain (G_pv) and photoconductance gain (G_pc). For comparison of the optical characteristics, the transparent gate MHEMT (TG-MHEMT) has been fabricated. The CTG-MHEMT as an optoelectronic mixer is a promising candidate that can simplify the base station architecture in fiber-optic microwave transmission systems.

Original language	English
Title of host publication	2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
Pages	340-343
Number of pages	4
DOIs	https://doi.org/10.1109/ICIPRM.2010.5516402
State	Published - 2010
Event	22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan Duration: 31 05 2010 → 04 06 2010

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Conference

Conference	22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
Country/Territory	Japan
City	Kagawa
Period	31/05/10 → 04/06/10

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Indium tin oxide
Metamorphic high electron mobility transistor
Mixer
Photodetector
Phototransistor
Photovoltaic effect
Responsivity

Access to Document

10.1109/ICIPRM.2010.5516402

Cite this

Lin, C. K., Lin, C. W., Wu, Y. C., & Chiu, H. C. (2010). An optoelectronic mixer based on composite transparent gate InAlAs/InGaAs metamorphic HEMT. In 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings (pp. 340-343). Article 5516402 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2010.5516402

@inproceedings{b604d7ab3416434a841eb64f5f900f7e,

title = "An optoelectronic mixer based on composite transparent gate InAlAs/InGaAs metamorphic HEMT",

abstract = "In this work, we have fabricated the first transparent gate using sputtered ITO/Au/ITO composite films InAlAs/InGaAs metamorphic HEMT (CTG-MHEMT) on GaAs substrate. The CTG-MHEMT has been demonstrated to increase front side optical coupling efficiency as an optoelectronic mixer. By optimizing the bias condition, the optoelectronic mixing efficiency can be enhanced. The photodetection mechanism of CTG-MHEMT is clarified by investigating the internal photovoltaic gain (Gpv) and photoconductance gain (Gpc). For comparison of the optical characteristics, the transparent gate MHEMT (TG-MHEMT) has been fabricated. The CTG-MHEMT as an optoelectronic mixer is a promising candidate that can simplify the base station architecture in fiber-optic microwave transmission systems.",

keywords = "Indium tin oxide, Metamorphic high electron mobility transistor, Mixer, Photodetector, Phototransistor, Photovoltaic effect, Responsivity",

author = "Lin, \{Che Kai\} and Lin, \{Chao Wei\} and Wu, \{Yi Chun\} and Chiu, \{Hsien Chin\}",

year = "2010",

doi = "10.1109/ICIPRM.2010.5516402",

language = "英语",

isbn = "9781424459209",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

pages = "340--343",

booktitle = "2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings",

note = "22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 ; Conference date: 31-05-2010 Through 04-06-2010",

}

Lin, CK, Lin, CW, Wu, YC & Chiu, HC 2010, An optoelectronic mixer based on composite transparent gate InAlAs/InGaAs metamorphic HEMT. in 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings., 5516402, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 340-343, 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010, Kagawa, Japan, 31/05/10. https://doi.org/10.1109/ICIPRM.2010.5516402

An optoelectronic mixer based on composite transparent gate InAlAs/InGaAs metamorphic HEMT. / Lin, Che Kai; Lin, Chao Wei; Wu, Yi Chun et al.
2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings. 2010. p. 340-343 5516402 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - An optoelectronic mixer based on composite transparent gate InAlAs/InGaAs metamorphic HEMT

AU - Lin, Che Kai

AU - Lin, Chao Wei

AU - Wu, Yi Chun

AU - Chiu, Hsien Chin

PY - 2010

Y1 - 2010

N2 - In this work, we have fabricated the first transparent gate using sputtered ITO/Au/ITO composite films InAlAs/InGaAs metamorphic HEMT (CTG-MHEMT) on GaAs substrate. The CTG-MHEMT has been demonstrated to increase front side optical coupling efficiency as an optoelectronic mixer. By optimizing the bias condition, the optoelectronic mixing efficiency can be enhanced. The photodetection mechanism of CTG-MHEMT is clarified by investigating the internal photovoltaic gain (Gpv) and photoconductance gain (Gpc). For comparison of the optical characteristics, the transparent gate MHEMT (TG-MHEMT) has been fabricated. The CTG-MHEMT as an optoelectronic mixer is a promising candidate that can simplify the base station architecture in fiber-optic microwave transmission systems.

AB - In this work, we have fabricated the first transparent gate using sputtered ITO/Au/ITO composite films InAlAs/InGaAs metamorphic HEMT (CTG-MHEMT) on GaAs substrate. The CTG-MHEMT has been demonstrated to increase front side optical coupling efficiency as an optoelectronic mixer. By optimizing the bias condition, the optoelectronic mixing efficiency can be enhanced. The photodetection mechanism of CTG-MHEMT is clarified by investigating the internal photovoltaic gain (Gpv) and photoconductance gain (Gpc). For comparison of the optical characteristics, the transparent gate MHEMT (TG-MHEMT) has been fabricated. The CTG-MHEMT as an optoelectronic mixer is a promising candidate that can simplify the base station architecture in fiber-optic microwave transmission systems.

KW - Indium tin oxide

KW - Metamorphic high electron mobility transistor

KW - Mixer

KW - Photodetector

KW - Phototransistor

KW - Photovoltaic effect

KW - Responsivity

UR - https://www.scopus.com/pages/publications/77955947240

U2 - 10.1109/ICIPRM.2010.5516402

DO - 10.1109/ICIPRM.2010.5516402

M3 - 会议稿件

AN - SCOPUS:77955947240

SN - 9781424459209

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SP - 340

EP - 343

BT - 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings

T2 - 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010

Y2 - 31 May 2010 through 4 June 2010

ER -

Lin CK, Lin CW, Wu YC, Chiu HC. An optoelectronic mixer based on composite transparent gate InAlAs/InGaAs metamorphic HEMT. In 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings. 2010. p. 340-343. 5516402. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). doi: 10.1109/ICIPRM.2010.5516402

An optoelectronic mixer based on composite transparent gate InAlAs/InGaAs metamorphic HEMT

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

Other files and links

Fingerprint

Cite this