An ultra-low-loss micromachined RF monolithic transformer with Partial Pattern Ground Shields (PPGS) for UWB RFIC applications

Chi Chen Chen; Yo Sheng Lin; Hsiao Bin Liang; Tao Wang; Shey Shi Lu

doi:10.1109/APMC.2006.4429673

An ultra-low-loss micromachined RF monolithic transformer with Partial Pattern Ground Shields (PPGS) for UWB RFIC applications

Chi Chen Chen^*, Yo Sheng Lin, Hsiao Bin Liang, Tao Wang, Shey Shi Lu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this paper, we demonstrate that high-quality-factor and low-power-loss transformers can be obtained if the partial pattern ground shields (PPGS) of polysilicon is adopted and the CMOS process compatible backside inductively-coupled-plasma (ICP) deep trench technology is used to selectively remove the silicon underneath the transformers. The results show that, if the PPGS was adopted and the backside ICP etching was done, a 90.6% (from 5.3 to 10.1) increase in Q-factor, a 10.8% (from 0.712 to 0.789) increase in magnetic-coupling factor (k_Im), a 21.5% (from 0.646 to 0.785) increase in maximum available power gain (G_Amax), and a 0.85 dB (from 1.90 dB to 1.05 dB) reduction in minimum noise factor (NF_min) were achieved at 5.7 GHz, respectively, for a bifilar transformer with an overall dimension of 230 × 215 μm². These results demonstrate that the proposed combination of PPGS and backside ICP etching is very promising for 3-10 GHz ultra-wideband (UWB) RF-ICs applications.

Original language	English
Title of host publication	2006 Asia-Pacific Microwave Conference Proceedings, APMC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1421-1424
Number of pages	4
ISBN (Print)	4902339102, 9784902339109
DOIs	https://doi.org/10.1109/APMC.2006.4429673
State	Published - 2006
Externally published	Yes
Event	2006 Asia-Pacific Microwave Conference, APMC - Yokohama, Japan Duration: 12 12 2006 → 15 12 2006

Publication series

Name	Asia-Pacific Microwave Conference Proceedings, APMC
Volume	3

Conference

Conference	2006 Asia-Pacific Microwave Conference, APMC
Country/Territory	Japan
City	Yokohama
Period	12/12/06 → 15/12/06

Keywords

Micromachined
Partial PGS
Power gain
Quality-factor
RFICs
Transformer

Access to Document

10.1109/APMC.2006.4429673

Cite this

Chen, C. C., Lin, Y. S., Liang, H. B., Wang, T., & Lu, S. S. (2006). An ultra-low-loss micromachined RF monolithic transformer with Partial Pattern Ground Shields (PPGS) for UWB RFIC applications. In 2006 Asia-Pacific Microwave Conference Proceedings, APMC (pp. 1421-1424). Article 4429673 (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APMC.2006.4429673

Chen, Chi Chen ; Lin, Yo Sheng ; Liang, Hsiao Bin et al. / An ultra-low-loss micromachined RF monolithic transformer with Partial Pattern Ground Shields (PPGS) for UWB RFIC applications. 2006 Asia-Pacific Microwave Conference Proceedings, APMC. Institute of Electrical and Electronics Engineers Inc., 2006. pp. 1421-1424 (Asia-Pacific Microwave Conference Proceedings, APMC).

@inproceedings{ce360a3edc6e4e05985625f3c32fba04,

title = "An ultra-low-loss micromachined RF monolithic transformer with Partial Pattern Ground Shields (PPGS) for UWB RFIC applications",

abstract = "In this paper, we demonstrate that high-quality-factor and low-power-loss transformers can be obtained if the partial pattern ground shields (PPGS) of polysilicon is adopted and the CMOS process compatible backside inductively-coupled-plasma (ICP) deep trench technology is used to selectively remove the silicon underneath the transformers. The results show that, if the PPGS was adopted and the backside ICP etching was done, a 90.6% (from 5.3 to 10.1) increase in Q-factor, a 10.8% (from 0.712 to 0.789) increase in magnetic-coupling factor (kIm), a 21.5% (from 0.646 to 0.785) increase in maximum available power gain (GAmax), and a 0.85 dB (from 1.90 dB to 1.05 dB) reduction in minimum noise factor (NFmin) were achieved at 5.7 GHz, respectively, for a bifilar transformer with an overall dimension of 230 × 215 μm2. These results demonstrate that the proposed combination of PPGS and backside ICP etching is very promising for 3-10 GHz ultra-wideband (UWB) RF-ICs applications.",

keywords = "Micromachined, Partial PGS, Power gain, Quality-factor, RFICs, Transformer",

author = "Chen, {Chi Chen} and Lin, {Yo Sheng} and Liang, {Hsiao Bin} and Tao Wang and Lu, {Shey Shi}",

year = "2006",

doi = "10.1109/APMC.2006.4429673",

language = "英语",

isbn = "4902339102",

series = "Asia-Pacific Microwave Conference Proceedings, APMC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1421--1424",

booktitle = "2006 Asia-Pacific Microwave Conference Proceedings, APMC",

address = "美国",

note = "2006 Asia-Pacific Microwave Conference, APMC ; Conference date: 12-12-2006 Through 15-12-2006",

}

Chen, CC, Lin, YS, Liang, HB, Wang, T & Lu, SS 2006, An ultra-low-loss micromachined RF monolithic transformer with Partial Pattern Ground Shields (PPGS) for UWB RFIC applications. in 2006 Asia-Pacific Microwave Conference Proceedings, APMC., 4429673, Asia-Pacific Microwave Conference Proceedings, APMC, vol. 3, Institute of Electrical and Electronics Engineers Inc., pp. 1421-1424, 2006 Asia-Pacific Microwave Conference, APMC, Yokohama, Japan, 12/12/06. https://doi.org/10.1109/APMC.2006.4429673

An ultra-low-loss micromachined RF monolithic transformer with Partial Pattern Ground Shields (PPGS) for UWB RFIC applications. / Chen, Chi Chen; Lin, Yo Sheng; Liang, Hsiao Bin et al.
2006 Asia-Pacific Microwave Conference Proceedings, APMC. Institute of Electrical and Electronics Engineers Inc., 2006. p. 1421-1424 4429673 (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - An ultra-low-loss micromachined RF monolithic transformer with Partial Pattern Ground Shields (PPGS) for UWB RFIC applications

AU - Chen, Chi Chen

AU - Lin, Yo Sheng

AU - Liang, Hsiao Bin

AU - Wang, Tao

AU - Lu, Shey Shi

PY - 2006

Y1 - 2006

N2 - In this paper, we demonstrate that high-quality-factor and low-power-loss transformers can be obtained if the partial pattern ground shields (PPGS) of polysilicon is adopted and the CMOS process compatible backside inductively-coupled-plasma (ICP) deep trench technology is used to selectively remove the silicon underneath the transformers. The results show that, if the PPGS was adopted and the backside ICP etching was done, a 90.6% (from 5.3 to 10.1) increase in Q-factor, a 10.8% (from 0.712 to 0.789) increase in magnetic-coupling factor (kIm), a 21.5% (from 0.646 to 0.785) increase in maximum available power gain (GAmax), and a 0.85 dB (from 1.90 dB to 1.05 dB) reduction in minimum noise factor (NFmin) were achieved at 5.7 GHz, respectively, for a bifilar transformer with an overall dimension of 230 × 215 μm2. These results demonstrate that the proposed combination of PPGS and backside ICP etching is very promising for 3-10 GHz ultra-wideband (UWB) RF-ICs applications.

AB - In this paper, we demonstrate that high-quality-factor and low-power-loss transformers can be obtained if the partial pattern ground shields (PPGS) of polysilicon is adopted and the CMOS process compatible backside inductively-coupled-plasma (ICP) deep trench technology is used to selectively remove the silicon underneath the transformers. The results show that, if the PPGS was adopted and the backside ICP etching was done, a 90.6% (from 5.3 to 10.1) increase in Q-factor, a 10.8% (from 0.712 to 0.789) increase in magnetic-coupling factor (kIm), a 21.5% (from 0.646 to 0.785) increase in maximum available power gain (GAmax), and a 0.85 dB (from 1.90 dB to 1.05 dB) reduction in minimum noise factor (NFmin) were achieved at 5.7 GHz, respectively, for a bifilar transformer with an overall dimension of 230 × 215 μm2. These results demonstrate that the proposed combination of PPGS and backside ICP etching is very promising for 3-10 GHz ultra-wideband (UWB) RF-ICs applications.

KW - Micromachined

KW - Partial PGS

KW - Power gain

KW - Quality-factor

KW - RFICs

KW - Transformer

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U2 - 10.1109/APMC.2006.4429673

DO - 10.1109/APMC.2006.4429673

M3 - 会议稿件

AN - SCOPUS:44949166678

SN - 4902339102

SN - 9784902339109

T3 - Asia-Pacific Microwave Conference Proceedings, APMC

SP - 1421

EP - 1424

BT - 2006 Asia-Pacific Microwave Conference Proceedings, APMC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2006 Asia-Pacific Microwave Conference, APMC

Y2 - 12 December 2006 through 15 December 2006

ER -

Chen CC, Lin YS, Liang HB, Wang T, Lu SS. An ultra-low-loss micromachined RF monolithic transformer with Partial Pattern Ground Shields (PPGS) for UWB RFIC applications. In 2006 Asia-Pacific Microwave Conference Proceedings, APMC. Institute of Electrical and Electronics Engineers Inc. 2006. p. 1421-1424. 4429673. (Asia-Pacific Microwave Conference Proceedings, APMC). doi: 10.1109/APMC.2006.4429673

An ultra-low-loss micromachined RF monolithic transformer with Partial Pattern Ground Shields (PPGS) for UWB RFIC applications

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Keywords

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