Analog-based synapse of double HfZrO2 ferroelectric FETs with homogeneous phase by superlattice HfO2-ZrO2 toward energy efficient accelerator

Siddheswar Maikap, F.-S. Chang, Y.-T. Chang, K.-Y. Hsiang, J.-Y. Lee, M. H. Lee, C. W. Liu, Z.-F. Lou, Senapati

Research output: Contribution to journalJournal Article peer-review

Original languageAmerican English
Pages (from-to)11 - 14
JournalIEEE Transactions on Materials for Electron Devices
Volume1
Issue number1
StatePublished - 05 2024

Bibliographical note

公開公告號: IEEE Transactions on Materials for Electron Devices
Announcement ID: IEEE Transactions on Materials for Electron Devices

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