Analog-based synapse of double HfZrO2 ferroelectric FETs with homogeneous phase by superlattice HfO2-ZrO2 toward energy efficient accelerator

Siddheswar Maikap; F.-S. Chang; Y.-T. Chang; K.-Y. Hsiang; J.-Y. Lee; M. H. Lee; C. W. Liu; Z.-F. Lou; Senapati

Analog-based synapse of double HfZrO2 ferroelectric FETs with homogeneous phase by superlattice HfO2-ZrO2 toward energy efficient accelerator

Siddheswar Maikap
, F.-S. Chang
, Y.-T. Chang
, K.-Y. Hsiang
, J.-Y. Lee
, M. H. Lee
, C. W. Liu
, Z.-F. Lou
, Senapati

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

Original language	American English
Pages (from-to)	11 - 14
Journal	IEEE Transactions on Materials for Electron Devices
Volume	1
Issue number	1
State	Published - 05 2024

Bibliographical note

公開公告號: IEEE Transactions on Materials for Electron Devices
Announcement ID: IEEE Transactions on Materials for Electron Devices

Cite this

@article{47380c80ee4b4b839f12c0499c653341,

title = "Analog-based synapse of double HfZrO2 ferroelectric FETs with homogeneous phase by superlattice HfO2-ZrO2 toward energy efficient accelerator",

author = "Siddheswar Maikap and F.-S. Chang and Y.-T. Chang and K.-Y. Hsiang and J.-Y. Lee and Lee, \{M. H.\} and Liu, \{C. W.\} and Z.-F. Lou and Senapati",

note = "公開公告號: IEEE Transactions on Materials for Electron Devices Announcement ID: IEEE Transactions on Materials for Electron Devices",

year = "2024",

month = may,

language = "American English",

volume = "1",

pages = "11 -- 14",

journal = "IEEE Transactions on Materials for Electron Devices",

issn = "2993-1576",

number = "1",

}

TY - JOUR

T1 - Analog-based synapse of double HfZrO2 ferroelectric FETs with homogeneous phase by superlattice HfO2-ZrO2 toward energy efficient accelerator

AU - Maikap, Siddheswar

AU - Chang, F.-S.

AU - Chang, Y.-T.

AU - Hsiang, K.-Y.

AU - Lee, J.-Y.

AU - Lee, M. H.

AU - Liu, C. W.

AU - Lou, Z.-F.

AU - Senapati, null

N1 - 公開公告號: IEEE Transactions on Materials for Electron Devices Announcement ID: IEEE Transactions on Materials for Electron Devices

PY - 2024/5

Y1 - 2024/5

M3 - Journal Article

SN - 2993-1576

VL - 1

SP - 11

EP - 14

JO - IEEE Transactions on Materials for Electron Devices

JF - IEEE Transactions on Materials for Electron Devices

IS - 1

ER -