Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiOx/SiO2 solid electrolytes

Jer Chyi Wang; Chun Hsiang Chiu; Ya Ting Chan; Chao Sung Lai

doi:10.1109/IPFA.2015.7224455

Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiO_x/SiO₂ solid electrolytes

Jer Chyi Wang^*
, Chun Hsiang Chiu
, Ya Ting Chan
, Chao Sung Lai

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The influence of current compliance (I_CC) on resistive switching (RS) of silver programmable metallization cells (Ag-PMCs) with stacked SiO_x/SiO₂ solid electrolytes has been investigated by carrier transportation and capacitance-voltage measurements. The low I_CC of 10 μA leads to the superior multilevel RS characteristics because of a locally discontinuous conductive filament within the stacked solid electrolytes. Possible RS mechanisms of Ag-PMCs with different I_CC are proposed according to the electrical analyses. Thus, the stacked-solid-electrolyte Ag-PMCs are considered as the promising candidate for future high-density nonvolatile memory application.

Original language	English
Title of host publication	Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	548-551
Number of pages	4
ISBN (Electronic)	9781479999286, 9781479999286
DOIs	https://doi.org/10.1109/IPFA.2015.7224455
State	Published - 25 08 2015
Event	22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan Duration: 29 06 2015 → 02 07 2015

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2015-August

Conference

Conference	22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
Country/Territory	Taiwan
City	Hsinchu
Period	29/06/15 → 02/07/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Access to Document

10.1109/IPFA.2015.7224455

Cite this

Wang, J. C., Chiu, C. H., Chan, Y. T., & Lai, C. S. (2015). Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiO_x/SiO₂ solid electrolytes. In Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 (pp. 548-551). Article 7224455 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2015.7224455

Wang, Jer Chyi ; Chiu, Chun Hsiang ; Chan, Ya Ting et al. / Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiO_x/SiO₂ solid electrolytes. Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 548-551 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

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title = "Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiOx/SiO2 solid electrolytes",

abstract = "The influence of current compliance (ICC) on resistive switching (RS) of silver programmable metallization cells (Ag-PMCs) with stacked SiOx/SiO2 solid electrolytes has been investigated by carrier transportation and capacitance-voltage measurements. The low ICC of 10 μA leads to the superior multilevel RS characteristics because of a locally discontinuous conductive filament within the stacked solid electrolytes. Possible RS mechanisms of Ag-PMCs with different ICC are proposed according to the electrical analyses. Thus, the stacked-solid-electrolyte Ag-PMCs are considered as the promising candidate for future high-density nonvolatile memory application.",

author = "Wang, \{Jer Chyi\} and Chiu, \{Chun Hsiang\} and Chan, \{Ya Ting\} and Lai, \{Chao Sung\}",

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doi = "10.1109/IPFA.2015.7224455",

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Wang, JC, Chiu, CH, Chan, YT & Lai, CS 2015, Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiO_x/SiO₂ solid electrolytes. in Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015., 7224455, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. 548-551, 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015, Hsinchu, Taiwan, 29/06/15. https://doi.org/10.1109/IPFA.2015.7224455

Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiO_x/SiO₂ solid electrolytes. / Wang, Jer Chyi; Chiu, Chun Hsiang; Chan, Ya Ting et al.
Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 548-551 7224455 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - The influence of current compliance (ICC) on resistive switching (RS) of silver programmable metallization cells (Ag-PMCs) with stacked SiOx/SiO2 solid electrolytes has been investigated by carrier transportation and capacitance-voltage measurements. The low ICC of 10 μA leads to the superior multilevel RS characteristics because of a locally discontinuous conductive filament within the stacked solid electrolytes. Possible RS mechanisms of Ag-PMCs with different ICC are proposed according to the electrical analyses. Thus, the stacked-solid-electrolyte Ag-PMCs are considered as the promising candidate for future high-density nonvolatile memory application.

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Wang JC, Chiu CH, Chan YT, Lai CS. Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiO_x/SiO₂ solid electrolytes. In Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 548-551. 7224455. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2015.7224455