Analysis of electromigration test data

Cher Ming Tan; Woon Loon See; J. Kah Chin Tey

doi:10.1109/ICSICT.2001.982055

Analysis of electromigration test data

Cher Ming Tan
, Woon Loon See
, J. Kah Chin Tey

Nanyang Technological University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Wafer level electromigration test is now a common practice in the semiconductor industry. Among the various fast wafer level electromigration tests, wafer level isothermal joule heated electromigration test (WIJET) is found to be most accurate for predicting the lifetime of metal line in ULSI. In order to reduce the test time, the temperature and current density of WIJET is usually increased to a high level. However, this could violate the important basic requirements of accelerated life testing (ALT), i.e. only one failure mechanism occurring during ALT, and the failure mechanism is the same as that under normal operating condition. In this work, the effect of temperature during WIJET on the fulfillment of these two requirements will be examined.

Original language	English
Title of host publication	2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Editors	Hiroshi Iwai, Xin-Ping Qu, Bing-Zong Li, Guo-Ping Ru, Paul Yu
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	964-966
Number of pages	3
ISBN (Electronic)	0780365208, 9780780365209
DOIs	https://doi.org/10.1109/ICSICT.2001.982055
State	Published - 2001
Externally published	Yes
Event	6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China Duration: 22 10 2001 → 25 10 2001

Publication series

Name	2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Volume	2

Conference

Conference	6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
Country/Territory	China
City	Shanghai
Period	22/10/01 → 25/10/01

Bibliographical note

Publisher Copyright:
© 2001 IEEE.

Access to Document

10.1109/ICSICT.2001.982055

Cite this

Tan, C. M., See, W. L., & Kah Chin Tey, J. (2001). Analysis of electromigration test data. In H. Iwai, X.-P. Qu, B.-Z. Li, G.-P. Ru, & P. Yu (Eds.), 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings (pp. 964-966). Article 982055 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings; Vol. 2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2001.982055

Tan, Cher Ming ; See, Woon Loon ; Kah Chin Tey, J. / Analysis of electromigration test data. 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. editor / Hiroshi Iwai ; Xin-Ping Qu ; Bing-Zong Li ; Guo-Ping Ru ; Paul Yu. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 964-966 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings).

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title = "Analysis of electromigration test data",

abstract = "Wafer level electromigration test is now a common practice in the semiconductor industry. Among the various fast wafer level electromigration tests, wafer level isothermal joule heated electromigration test (WIJET) is found to be most accurate for predicting the lifetime of metal line in ULSI. In order to reduce the test time, the temperature and current density of WIJET is usually increased to a high level. However, this could violate the important basic requirements of accelerated life testing (ALT), i.e. only one failure mechanism occurring during ALT, and the failure mechanism is the same as that under normal operating condition. In this work, the effect of temperature during WIJET on the fulfillment of these two requirements will be examined.",

author = "Tan, \{Cher Ming\} and See, \{Woon Loon\} and \{Kah Chin Tey\}, J.",

note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 ; Conference date: 22-10-2001 Through 25-10-2001",

year = "2001",

doi = "10.1109/ICSICT.2001.982055",

language = "英语",

series = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "964--966",

editor = "Hiroshi Iwai and Xin-Ping Qu and Bing-Zong Li and Guo-Ping Ru and Paul Yu",

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Tan, CM, See, WL & Kah Chin Tey, J 2001, Analysis of electromigration test data. in H Iwai, X-P Qu, B-Z Li, G-P Ru & P Yu (eds), 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings., 982055, 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings, vol. 2, Institute of Electrical and Electronics Engineers Inc., pp. 964-966, 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001, Shanghai, China, 22/10/01. https://doi.org/10.1109/ICSICT.2001.982055

Analysis of electromigration test data. / Tan, Cher Ming; See, Woon Loon; Kah Chin Tey, J.
2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. ed. / Hiroshi Iwai; Xin-Ping Qu; Bing-Zong Li; Guo-Ping Ru; Paul Yu. Institute of Electrical and Electronics Engineers Inc., 2001. p. 964-966 982055 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Tan, Cher Ming

AU - See, Woon Loon

AU - Kah Chin Tey, J.

PY - 2001

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N2 - Wafer level electromigration test is now a common practice in the semiconductor industry. Among the various fast wafer level electromigration tests, wafer level isothermal joule heated electromigration test (WIJET) is found to be most accurate for predicting the lifetime of metal line in ULSI. In order to reduce the test time, the temperature and current density of WIJET is usually increased to a high level. However, this could violate the important basic requirements of accelerated life testing (ALT), i.e. only one failure mechanism occurring during ALT, and the failure mechanism is the same as that under normal operating condition. In this work, the effect of temperature during WIJET on the fulfillment of these two requirements will be examined.

AB - Wafer level electromigration test is now a common practice in the semiconductor industry. Among the various fast wafer level electromigration tests, wafer level isothermal joule heated electromigration test (WIJET) is found to be most accurate for predicting the lifetime of metal line in ULSI. In order to reduce the test time, the temperature and current density of WIJET is usually increased to a high level. However, this could violate the important basic requirements of accelerated life testing (ALT), i.e. only one failure mechanism occurring during ALT, and the failure mechanism is the same as that under normal operating condition. In this work, the effect of temperature during WIJET on the fulfillment of these two requirements will be examined.

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A2 - Qu, Xin-Ping

A2 - Li, Bing-Zong

A2 - Ru, Guo-Ping

A2 - Yu, Paul

PB - Institute of Electrical and Electronics Engineers Inc.

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Tan CM, See WL, Kah Chin Tey J. Analysis of electromigration test data. In Iwai H, Qu XP, Li BZ, Ru GP, Yu P, editors, 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2001. p. 964-966. 982055. (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings). doi: 10.1109/ICSICT.2001.982055

Analysis of electromigration test data

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