Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method

Jenn Fang Chen*, Nie Chuan Chen, Wen Yen Huang, Wei I. Lee, Ming Shiann Feng

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

6 Scopus citations

Abstract

The transient capacitance method was used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27eV were observed in the TMGa sample, while a deep level at 0.60eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.

Original languageEnglish
Pages (from-to)L810-L812
JournalJapanese Journal of Applied Physics
Volume35
Issue number7 PART A
DOIs
StatePublished - 01 07 1996
Externally publishedYes

Keywords

  • Deep levels
  • GaN
  • OMVPE
  • Transient capacitance

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