Abstract
The transient capacitance method was used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27eV were observed in the TMGa sample, while a deep level at 0.60eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.
Original language | English |
---|---|
Pages (from-to) | L810-L812 |
Journal | Japanese Journal of Applied Physics |
Volume | 35 |
Issue number | 7 PART A |
DOIs | |
State | Published - 01 07 1996 |
Externally published | Yes |
Keywords
- Deep levels
- GaN
- OMVPE
- Transient capacitance