Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method

Jenn Fang Chen; Nie Chuan Chen; Wen Yen Huang; Wei I. Lee; Ming Shiann Feng

doi:10.1143/jjap.35.l810

Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method

Jenn Fang Chen^*, Nie Chuan Chen, Wen Yen Huang, Wei I. Lee, Ming Shiann Feng

^*Corresponding author for this work

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

6 Scopus citations

Abstract

The transient capacitance method was used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27eV were observed in the TMGa sample, while a deep level at 0.60eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.

Original language	English
Pages (from-to)	L810-L812
Journal	Japanese Journal of Applied Physics
Volume	35
Issue number	7 PART A
DOIs	https://doi.org/10.1143/jjap.35.l810
State	Published - 01 07 1996
Externally published	Yes

Keywords

Deep levels
GaN
OMVPE
Transient capacitance

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10.1143/jjap.35.l810

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title = "Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method",

abstract = "The transient capacitance method was used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27eV were observed in the TMGa sample, while a deep level at 0.60eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.",

keywords = "Deep levels, GaN, OMVPE, Transient capacitance",

author = "Chen, \{Jenn Fang\} and Chen, \{Nie Chuan\} and Huang, \{Wen Yen\} and Lee, \{Wei I.\} and Feng, \{Ming Shiann\}",

year = "1996",

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day = "1",

doi = "10.1143/jjap.35.l810",

language = "英语",

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journal = "Japanese Journal of Applied Physics",

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TY - JOUR

T1 - Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method

AU - Chen, Jenn Fang

AU - Chen, Nie Chuan

AU - Huang, Wen Yen

AU - Lee, Wei I.

AU - Feng, Ming Shiann

PY - 1996/7/1

Y1 - 1996/7/1

N2 - The transient capacitance method was used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27eV were observed in the TMGa sample, while a deep level at 0.60eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.

AB - The transient capacitance method was used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27eV were observed in the TMGa sample, while a deep level at 0.60eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.

KW - Deep levels

KW - GaN

KW - OMVPE

KW - Transient capacitance

UR - https://www.scopus.com/pages/publications/0030189722

U2 - 10.1143/jjap.35.l810

DO - 10.1143/jjap.35.l810

M3 - 文章

AN - SCOPUS:0030189722

SN - 0021-4922

VL - 35

SP - L810-L812

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 7 PART A

ER -

Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method

Abstract

Keywords

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