Analysis of negative bias temperature instability in body-tied low-temperature polycrystalline silicon thin-film transistors

Chih Yang Chen; Ming Wen Ma; Wei Cheng Chen; Hsiao Yi Lin; Kuan Lin Yeh; Shen De Wang; Tan Fu Lei

doi:10.1109/LED.2007.914083

Analysis of negative bias temperature instability in body-tied low-temperature polycrystalline silicon thin-film transistors

Chih Yang Chen^*, Ming Wen Ma, Wei Cheng Chen, Hsiao Yi Lin, Kuan Lin Yeh, Shen De Wang, Tan Fu Lei

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

13 Scopus citations

Abstract

Negative bias temperature instability (NBTI) degradation mechanism in body-tied low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) is analyzed by the charge-pumping (CP) technique. The properties of bulk trap states (including interface and grain boundary trap states) are directly characterized from the CP current. The increase of the fixed oxide charges is also extracted, which has not been quantified in previous studies of NBTI degradation in LTPS TFTs. The experimental results confirm that the NBTI degradation in LTPS TFTs is caused by the generation of bulk trap states and oxide trap states.

Original language	English
Pages (from-to)	165-167
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	2
DOIs	https://doi.org/10.1109/LED.2007.914083
State	Published - 02 2008
Externally published	Yes

Keywords

Charge-pumping (CP) technique
Low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs)
Negative bias temperature instability (NBTI)

Access to Document

10.1109/LED.2007.914083

Cite this

@article{2ec18214be2d4a4b8b67cc20ca59458d,

title = "Analysis of negative bias temperature instability in body-tied low-temperature polycrystalline silicon thin-film transistors",

abstract = "Negative bias temperature instability (NBTI) degradation mechanism in body-tied low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) is analyzed by the charge-pumping (CP) technique. The properties of bulk trap states (including interface and grain boundary trap states) are directly characterized from the CP current. The increase of the fixed oxide charges is also extracted, which has not been quantified in previous studies of NBTI degradation in LTPS TFTs. The experimental results confirm that the NBTI degradation in LTPS TFTs is caused by the generation of bulk trap states and oxide trap states.",

keywords = "Charge-pumping (CP) technique, Low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs), Negative bias temperature instability (NBTI)",

author = "Chen, {Chih Yang} and Ma, {Ming Wen} and Chen, {Wei Cheng} and Lin, {Hsiao Yi} and Yeh, {Kuan Lin} and Wang, {Shen De} and Lei, {Tan Fu}",

year = "2008",

month = feb,

doi = "10.1109/LED.2007.914083",

language = "英语",

volume = "29",

pages = "165--167",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Analysis of negative bias temperature instability in body-tied low-temperature polycrystalline silicon thin-film transistors

AU - Chen, Chih Yang

AU - Ma, Ming Wen

AU - Chen, Wei Cheng

AU - Lin, Hsiao Yi

AU - Yeh, Kuan Lin

AU - Wang, Shen De

AU - Lei, Tan Fu

PY - 2008/2

Y1 - 2008/2

N2 - Negative bias temperature instability (NBTI) degradation mechanism in body-tied low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) is analyzed by the charge-pumping (CP) technique. The properties of bulk trap states (including interface and grain boundary trap states) are directly characterized from the CP current. The increase of the fixed oxide charges is also extracted, which has not been quantified in previous studies of NBTI degradation in LTPS TFTs. The experimental results confirm that the NBTI degradation in LTPS TFTs is caused by the generation of bulk trap states and oxide trap states.

AB - Negative bias temperature instability (NBTI) degradation mechanism in body-tied low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) is analyzed by the charge-pumping (CP) technique. The properties of bulk trap states (including interface and grain boundary trap states) are directly characterized from the CP current. The increase of the fixed oxide charges is also extracted, which has not been quantified in previous studies of NBTI degradation in LTPS TFTs. The experimental results confirm that the NBTI degradation in LTPS TFTs is caused by the generation of bulk trap states and oxide trap states.

KW - Charge-pumping (CP) technique

KW - Low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs)

KW - Negative bias temperature instability (NBTI)

UR - http://www.scopus.com/inward/record.url?scp=39549087426&partnerID=8YFLogxK

U2 - 10.1109/LED.2007.914083

DO - 10.1109/LED.2007.914083

M3 - 文章

AN - SCOPUS:39549087426

SN - 0741-3106

VL - 29

SP - 165

EP - 167

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

Analysis of negative bias temperature instability in body-tied low-temperature polycrystalline silicon thin-film transistors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this