Analytical delay model of CMOS inverter including channel-length modulation

H. C. Chow; W. S. Feng

doi:10.1049/el:19920256

Analytical delay model of CMOS inverter including channel-length modulation

H. C. Chow
, W. S. Feng

National Taiwan University

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

An analytical delay model of a CMOS inverter is introduced for the first time which includes channel-length modulation, source-drain resistance and high-field effects. Calculations of the rise, fall and delay times show good agreement with SPICE simulations.

Original language	English
Pages (from-to)	408-410
Number of pages	3
Journal	Electronics Letters
Volume	28
Issue number	4
DOIs	https://doi.org/10.1049/el:19920256
State	Published - 02 1992
Externally published	Yes

Keywords

Fieldeffect transistors
Semiconductor devices and materials

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10.1049/el:19920256

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title = "Analytical delay model of CMOS inverter including channel-length modulation",

abstract = "An analytical delay model of a CMOS inverter is introduced for the first time which includes channel-length modulation, source-drain resistance and high-field effects. Calculations of the rise, fall and delay times show good agreement with SPICE simulations.",

keywords = "Fieldeffect transistors, Semiconductor devices and materials",

author = "Chow, \{H. C.\} and Feng, \{W. S.\}",

year = "1992",

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volume = "28",

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AB - An analytical delay model of a CMOS inverter is introduced for the first time which includes channel-length modulation, source-drain resistance and high-field effects. Calculations of the rise, fall and delay times show good agreement with SPICE simulations.

KW - Fieldeffect transistors

KW - Semiconductor devices and materials

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DO - 10.1049/el:19920256

M3 - 文章

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JO - Electronics Letters

JF - Electronics Letters

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ER -

Analytical delay model of CMOS inverter including channel-length modulation

Abstract

Keywords

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