ANALYTICAL MODEL FOR INTRINSIC CAPACITANCES OF SHORT-CHANNEL MOSFETS.

Bing J. Sheu; Ping K. Ko

doi:10.1109/iedm.1984.190707

ANALYTICAL MODEL FOR INTRINSIC CAPACITANCES OF SHORT-CHANNEL MOSFETS.

Bing J. Sheu^*
, Ping K. Ko

^*Corresponding author for this work

University of California at Berkeley

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

The characteristics of the intrinsic capacitances of short-channel MOSFETs are described and an analytical model to explain them is presented. The inclusion of the mobility degradation effect, velocity saturation effect, bias-dependent fringing-field effect, and source/drain series resistance effect is found to be adequate for accurate prediction of the intrinsic capacitances. The model contains simple equations which can be implemented in a computer for fast computations.

Original language	English
Pages (from-to)	300-303
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/iedm.1984.190707
State	Published - 1984
Externally published	Yes

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10.1109/iedm.1984.190707

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title = "ANALYTICAL MODEL FOR INTRINSIC CAPACITANCES OF SHORT-CHANNEL MOSFETS.",

abstract = "The characteristics of the intrinsic capacitances of short-channel MOSFETs are described and an analytical model to explain them is presented. The inclusion of the mobility degradation effect, velocity saturation effect, bias-dependent fringing-field effect, and source/drain series resistance effect is found to be adequate for accurate prediction of the intrinsic capacitances. The model contains simple equations which can be implemented in a computer for fast computations.",

author = "Sheu, \{Bing J.\} and Ko, \{Ping K.\}",

year = "1984",

doi = "10.1109/iedm.1984.190707",

language = "英语",

pages = "300--303",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - ANALYTICAL MODEL FOR INTRINSIC CAPACITANCES OF SHORT-CHANNEL MOSFETS.

AU - Sheu, Bing J.

AU - Ko, Ping K.

PY - 1984

Y1 - 1984

N2 - The characteristics of the intrinsic capacitances of short-channel MOSFETs are described and an analytical model to explain them is presented. The inclusion of the mobility degradation effect, velocity saturation effect, bias-dependent fringing-field effect, and source/drain series resistance effect is found to be adequate for accurate prediction of the intrinsic capacitances. The model contains simple equations which can be implemented in a computer for fast computations.

AB - The characteristics of the intrinsic capacitances of short-channel MOSFETs are described and an analytical model to explain them is presented. The inclusion of the mobility degradation effect, velocity saturation effect, bias-dependent fringing-field effect, and source/drain series resistance effect is found to be adequate for accurate prediction of the intrinsic capacitances. The model contains simple equations which can be implemented in a computer for fast computations.

UR - https://www.scopus.com/pages/publications/0021640218

U2 - 10.1109/iedm.1984.190707

DO - 10.1109/iedm.1984.190707

M3 - 会议文章

AN - SCOPUS:0021640218

SN - 0163-1918

SP - 300

EP - 303

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

ER -

ANALYTICAL MODEL FOR INTRINSIC CAPACITANCES OF SHORT-CHANNEL MOSFETS.

Abstract

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