Annealing-dependent breakdown voltage and capacitance of gallium oxide-based gallium nitride mosom varactors

Yu Li Hsieh; Liann Be Chang; Ming Jer Jeng; Chung Yi Li; Chien Fu Shih; Hung Tsung Wang; Zi Xin Ding; Chia Ning Chang; Hao Zong Lo; Yuan Po Chiang

doi:10.3390/ma13214956

Annealing-dependent breakdown voltage and capacitance of gallium oxide-based gallium nitride mosom varactors

Yu Li Hsieh, Liann Be Chang^*, Ming Jer Jeng, Chung Yi Li, Chien Fu Shih, Hung Tsung Wang, Zi Xin Ding, Chia Ning Chang, Hao Zong Lo, Yuan Po Chiang

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

Our laboratory has previously revealed the use of metal-semiconductor-metal (MSM) varactors against malicious pulses, as well as completed the related verification and measurements of such a circuit. To improve the reliability of this protection module further, in this study, we deposited a gallium oxide (Ga₂O₃) thin film in between the Schottky contact electrode to manufacture a metal-oxide-semiconductor-oxide-metal (MOSOM) varactor. However, the thin-film quality and heterojunction interfaces will affect these fabricated varactors in various ways, such as the asymmetry threshold voltage to the variable capacitance characteristics. This study aims to address the issues associated with the inserted oxide thin film, as well as to determine how improvements could be obtained by using an oxygen furnace annealing process. As a result, the breakdown voltage of the MOSOM varactor was further promoted and a more robust anti-surge module was thus realized.

Original language	English
Article number	4956
Pages (from-to)	1-16
Number of pages	16
Journal	Materials
Volume	13
Issue number	21
DOIs	https://doi.org/10.3390/ma13214956
State	Published - 11 2020

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Publisher Copyright:
© 2020 by the authors. Licensee MDPI, Basel, Switzerland.

Keywords

Breakdown voltage
Furnace annealing
GaO
Heterojunction
MOSOM
MSM
Varactor

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title = "Annealing-dependent breakdown voltage and capacitance of gallium oxide-based gallium nitride mosom varactors",

abstract = "Our laboratory has previously revealed the use of metal-semiconductor-metal (MSM) varactors against malicious pulses, as well as completed the related verification and measurements of such a circuit. To improve the reliability of this protection module further, in this study, we deposited a gallium oxide (Ga2O3) thin film in between the Schottky contact electrode to manufacture a metal-oxide-semiconductor-oxide-metal (MOSOM) varactor. However, the thin-film quality and heterojunction interfaces will affect these fabricated varactors in various ways, such as the asymmetry threshold voltage to the variable capacitance characteristics. This study aims to address the issues associated with the inserted oxide thin film, as well as to determine how improvements could be obtained by using an oxygen furnace annealing process. As a result, the breakdown voltage of the MOSOM varactor was further promoted and a more robust anti-surge module was thus realized.",

keywords = "Breakdown voltage, Furnace annealing, GaO, Heterojunction, MOSOM, MSM, Varactor",

author = "Hsieh, \{Yu Li\} and Chang, \{Liann Be\} and Jeng, \{Ming Jer\} and Li, \{Chung Yi\} and Shih, \{Chien Fu\} and Wang, \{Hung Tsung\} and Ding, \{Zi Xin\} and Chang, \{Chia Ning\} and Lo, \{Hao Zong\} and Chiang, \{Yuan Po\}",

note = "Publisher Copyright: {\textcopyright} 2020 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2020",

month = nov,

doi = "10.3390/ma13214956",

language = "英语",

volume = "13",

pages = "1--16",

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issn = "1996-1944",

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TY - JOUR

T1 - Annealing-dependent breakdown voltage and capacitance of gallium oxide-based gallium nitride mosom varactors

AU - Hsieh, Yu Li

AU - Chang, Liann Be

AU - Jeng, Ming Jer

AU - Li, Chung Yi

AU - Shih, Chien Fu

AU - Wang, Hung Tsung

AU - Ding, Zi Xin

AU - Chang, Chia Ning

AU - Lo, Hao Zong

AU - Chiang, Yuan Po

PY - 2020/11

Y1 - 2020/11

N2 - Our laboratory has previously revealed the use of metal-semiconductor-metal (MSM) varactors against malicious pulses, as well as completed the related verification and measurements of such a circuit. To improve the reliability of this protection module further, in this study, we deposited a gallium oxide (Ga2O3) thin film in between the Schottky contact electrode to manufacture a metal-oxide-semiconductor-oxide-metal (MOSOM) varactor. However, the thin-film quality and heterojunction interfaces will affect these fabricated varactors in various ways, such as the asymmetry threshold voltage to the variable capacitance characteristics. This study aims to address the issues associated with the inserted oxide thin film, as well as to determine how improvements could be obtained by using an oxygen furnace annealing process. As a result, the breakdown voltage of the MOSOM varactor was further promoted and a more robust anti-surge module was thus realized.

AB - Our laboratory has previously revealed the use of metal-semiconductor-metal (MSM) varactors against malicious pulses, as well as completed the related verification and measurements of such a circuit. To improve the reliability of this protection module further, in this study, we deposited a gallium oxide (Ga2O3) thin film in between the Schottky contact electrode to manufacture a metal-oxide-semiconductor-oxide-metal (MOSOM) varactor. However, the thin-film quality and heterojunction interfaces will affect these fabricated varactors in various ways, such as the asymmetry threshold voltage to the variable capacitance characteristics. This study aims to address the issues associated with the inserted oxide thin film, as well as to determine how improvements could be obtained by using an oxygen furnace annealing process. As a result, the breakdown voltage of the MOSOM varactor was further promoted and a more robust anti-surge module was thus realized.

KW - Breakdown voltage

KW - Furnace annealing

KW - GaO

KW - Heterojunction

KW - MOSOM

KW - MSM

KW - Varactor

UR - https://www.scopus.com/pages/publications/85095724855

U2 - 10.3390/ma13214956

DO - 10.3390/ma13214956

M3 - 文章

AN - SCOPUS:85095724855

SN - 1996-1944

VL - 13

SP - 1

EP - 16

JO - Materials

JF - Materials

IS - 21

M1 - 4956

ER -

Annealing-dependent breakdown voltage and capacitance of gallium oxide-based gallium nitride mosom varactors

Abstract

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Keywords

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