ANNEALING OF PHOSPHORUS-ION-IMPLANTED COPPER INDIUM DISULFIDE BY A PULSED ELECTRON BEAM.

Pulsed electron beam annealing of phosphorus implanted CuInS//2 has been found to be an efficient method in p-type doping of CuInS//2. A sheet resistance as low as 10. 1 OMEGA / D'ALEMB , a sheet carrier concentration as high as 1. 0 multiplied by 10**1**6 cm** minus **2, and a hole mobility as high as 499 cm**2/V multiplied by (times) s have been obtained. The irradiation energy density for the best doping condition was determined to be in the ranges between 11-13 J/cm**2. Using Van der Pauw/Hall technique in conjunction with a chemical etching technique, the effective carrier concentration profiles have been determined with a maximum carrier concentration of approximately 9 multiplied by 10**1**9 cm** minus **3. Excellent p-n CuInS//2 homojunctions have been fabricated by electron-beam pulse annealing with an ideality factor of 1. 75. The behavior of an impurity in I-III-VI//2 compounds is not simple. The incorporated impurities are compensated electrically by native defects. Impurities often combine with native defects to form complex centers which often change the characteristics of the semiconductors.