Anomalous disordered-related phenomena in the InGaN/GaN multiple quantum well heterosystems

Yi Wen Haung*, Yu Fang Chen, Jen Cheng Wang, Hui Tang Shen, Tzer En Nee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Influences of InGaN/GaN MQW heterostructures with InGaN/GaN and GaN barrier on the carrier confinement have been investigated the degree of disorder over a broad range of temperatures from 20 K to 300 K.

Original languageEnglish
Title of host publication2009 14th OptoElectronics and Communications Conference, OECC 2009
DOIs
StatePublished - 2009
Event2009 14th OptoElectronics and Communications Conference, OECC 2009 - Hong Kong, China
Duration: 13 07 200917 07 2009

Publication series

Name2009 14th OptoElectronics and Communications Conference, OECC 2009

Conference

Conference2009 14th OptoElectronics and Communications Conference, OECC 2009
Country/TerritoryChina
CityHong Kong
Period13/07/0917/07/09

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