Anomalous disordered-related phenomena in the InGaN/GaN multiple quantum well heterosystems

Yi Wen Haung; Yu Fang Chen; Jen Cheng Wang; Hui Tang Shen; Tzer En Nee

doi:10.1109/OECC.2009.5217626

Anomalous disordered-related phenomena in the InGaN/GaN multiple quantum well heterosystems

Yi Wen Haung^*
, Yu Fang Chen
, Jen Cheng Wang
, Hui Tang Shen
, Tzer En Nee

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Influences of InGaN/GaN MQW heterostructures with InGaN/GaN and GaN barrier on the carrier confinement have been investigated the degree of disorder over a broad range of temperatures from 20 K to 300 K.

Original language	English
Title of host publication	2009 14th OptoElectronics and Communications Conference, OECC 2009
DOIs	https://doi.org/10.1109/OECC.2009.5217626
State	Published - 2009
Event	2009 14th OptoElectronics and Communications Conference, OECC 2009 - Hong Kong, China Duration: 13 07 2009 → 17 07 2009

Publication series

Name	2009 14th OptoElectronics and Communications Conference, OECC 2009

Conference

Conference	2009 14th OptoElectronics and Communications Conference, OECC 2009
Country/Territory	China
City	Hong Kong
Period	13/07/09 → 17/07/09

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10.1109/OECC.2009.5217626

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@inproceedings{30376c56a82c49f38cabf87031adc25b,

title = "Anomalous disordered-related phenomena in the InGaN/GaN multiple quantum well heterosystems",

abstract = "Influences of InGaN/GaN MQW heterostructures with InGaN/GaN and GaN barrier on the carrier confinement have been investigated the degree of disorder over a broad range of temperatures from 20 K to 300 K.",

author = "Haung, \{Yi Wen\} and Chen, \{Yu Fang\} and Wang, \{Jen Cheng\} and Shen, \{Hui Tang\} and Nee, \{Tzer En\}",

year = "2009",

doi = "10.1109/OECC.2009.5217626",

language = "英语",

isbn = "9781424441037",

series = "2009 14th OptoElectronics and Communications Conference, OECC 2009",

booktitle = "2009 14th OptoElectronics and Communications Conference, OECC 2009",

note = "2009 14th OptoElectronics and Communications Conference, OECC 2009 ; Conference date: 13-07-2009 Through 17-07-2009",

}

Haung, YW, Chen, YF, Wang, JC, Shen, HT & Nee, TE 2009, Anomalous disordered-related phenomena in the InGaN/GaN multiple quantum well heterosystems. in 2009 14th OptoElectronics and Communications Conference, OECC 2009., 5217626, 2009 14th OptoElectronics and Communications Conference, OECC 2009, 2009 14th OptoElectronics and Communications Conference, OECC 2009, Hong Kong, China, 13/07/09. https://doi.org/10.1109/OECC.2009.5217626

Anomalous disordered-related phenomena in the InGaN/GaN multiple quantum well heterosystems. / Haung, Yi Wen; Chen, Yu Fang; Wang, Jen Cheng et al.
2009 14th OptoElectronics and Communications Conference, OECC 2009. 2009. 5217626 (2009 14th OptoElectronics and Communications Conference, OECC 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Anomalous disordered-related phenomena in the InGaN/GaN multiple quantum well heterosystems

AU - Haung, Yi Wen

AU - Chen, Yu Fang

AU - Wang, Jen Cheng

AU - Shen, Hui Tang

AU - Nee, Tzer En

PY - 2009

Y1 - 2009

N2 - Influences of InGaN/GaN MQW heterostructures with InGaN/GaN and GaN barrier on the carrier confinement have been investigated the degree of disorder over a broad range of temperatures from 20 K to 300 K.

AB - Influences of InGaN/GaN MQW heterostructures with InGaN/GaN and GaN barrier on the carrier confinement have been investigated the degree of disorder over a broad range of temperatures from 20 K to 300 K.

UR - https://www.scopus.com/pages/publications/70350734281

U2 - 10.1109/OECC.2009.5217626

DO - 10.1109/OECC.2009.5217626

M3 - 会议稿件

AN - SCOPUS:70350734281

SN - 9781424441037

T3 - 2009 14th OptoElectronics and Communications Conference, OECC 2009

BT - 2009 14th OptoElectronics and Communications Conference, OECC 2009

T2 - 2009 14th OptoElectronics and Communications Conference, OECC 2009

Y2 - 13 July 2009 through 17 July 2009

ER -

Anomalous disordered-related phenomena in the InGaN/GaN multiple quantum well heterosystems

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