Anomalous magnetic properties of Mn-implanted InN thin films

P. H. Chang; H. C. Chen; J. W. Lin; M. X. Lai; S. Y. Hung; M. J. Lee

doi:10.1016/j.tsf.2016.02.050

Anomalous magnetic properties of Mn-implanted InN thin films

P. H. Chang^*, H. C. Chen, J. W. Lin, M. X. Lai, S. Y. Hung, M. J. Lee

^*Corresponding author for this work

National Taipei University of Technology

Research output: Contribution to journal › Journal Article › peer-review

4 Scopus citations

Abstract

Anomalous magnetic properties of C-axis-oriented Mn-implanted InN thin films on GaN/sapphire substrates are reported. X-ray diffraction analysis revealed Mn-implanted InN films of a high-quality crystal phase with wurtzite structure. All samples show n-type conductivity by Hall measurements. The un-implanted InN/GaN/Al₂O₃ sample with a carrier concentration of 1.6 × 10²¹ cm^− 3 (n_2D = 8 × 10¹⁶ cm^− 2) exhibits increasing magnetization with decreasing temperature and did not appear superconductive above 1.8 K. After Mn-ion implantation, the appearance of the Meissner effect with superconducting onset temperature near 2.4 K was observed. The superconducting volume fraction χ is near 36% at 2.2 K. Moreover, type-II behavior was further characterized by field-dependent magnetization measurement.

Original language	English
Pages (from-to)	184-188
Number of pages	5
Journal	Thin Solid Films
Volume	618
DOIs	https://doi.org/10.1016/j.tsf.2016.02.050
State	Published - 01 11 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016 Elsevier B.V.

Keywords

InN
Magnetic semiconductor
Meissner effect
Mn-implanted
Superconductivity

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title = "Anomalous magnetic properties of Mn-implanted InN thin films",

abstract = "Anomalous magnetic properties of C-axis-oriented Mn-implanted InN thin films on GaN/sapphire substrates are reported. X-ray diffraction analysis revealed Mn-implanted InN films of a high-quality crystal phase with wurtzite structure. All samples show n-type conductivity by Hall measurements. The un-implanted InN/GaN/Al2O3 sample with a carrier concentration of 1.6 × 1021 cm− 3 (n2D = 8 × 1016 cm− 2) exhibits increasing magnetization with decreasing temperature and did not appear superconductive above 1.8 K. After Mn-ion implantation, the appearance of the Meissner effect with superconducting onset temperature near 2.4 K was observed. The superconducting volume fraction χ is near 36% at 2.2 K. Moreover, type-II behavior was further characterized by field-dependent magnetization measurement.",

keywords = "InN, Magnetic semiconductor, Meissner effect, Mn-implanted, Superconductivity",

author = "Chang, {P. H.} and Chen, {H. C.} and Lin, {J. W.} and Lai, {M. X.} and Hung, {S. Y.} and Lee, {M. J.}",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2016",

month = nov,

day = "1",

doi = "10.1016/j.tsf.2016.02.050",

language = "英语",

volume = "618",

pages = "184--188",

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T1 - Anomalous magnetic properties of Mn-implanted InN thin films

AU - Chang, P. H.

AU - Chen, H. C.

AU - Lin, J. W.

AU - Lai, M. X.

AU - Hung, S. Y.

AU - Lee, M. J.

PY - 2016/11/1

Y1 - 2016/11/1

N2 - Anomalous magnetic properties of C-axis-oriented Mn-implanted InN thin films on GaN/sapphire substrates are reported. X-ray diffraction analysis revealed Mn-implanted InN films of a high-quality crystal phase with wurtzite structure. All samples show n-type conductivity by Hall measurements. The un-implanted InN/GaN/Al2O3 sample with a carrier concentration of 1.6 × 1021 cm− 3 (n2D = 8 × 1016 cm− 2) exhibits increasing magnetization with decreasing temperature and did not appear superconductive above 1.8 K. After Mn-ion implantation, the appearance of the Meissner effect with superconducting onset temperature near 2.4 K was observed. The superconducting volume fraction χ is near 36% at 2.2 K. Moreover, type-II behavior was further characterized by field-dependent magnetization measurement.

AB - Anomalous magnetic properties of C-axis-oriented Mn-implanted InN thin films on GaN/sapphire substrates are reported. X-ray diffraction analysis revealed Mn-implanted InN films of a high-quality crystal phase with wurtzite structure. All samples show n-type conductivity by Hall measurements. The un-implanted InN/GaN/Al2O3 sample with a carrier concentration of 1.6 × 1021 cm− 3 (n2D = 8 × 1016 cm− 2) exhibits increasing magnetization with decreasing temperature and did not appear superconductive above 1.8 K. After Mn-ion implantation, the appearance of the Meissner effect with superconducting onset temperature near 2.4 K was observed. The superconducting volume fraction χ is near 36% at 2.2 K. Moreover, type-II behavior was further characterized by field-dependent magnetization measurement.

KW - InN

KW - Magnetic semiconductor

KW - Meissner effect

KW - Mn-implanted

KW - Superconductivity

UR - http://www.scopus.com/inward/record.url?scp=84959552245&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2016.02.050

DO - 10.1016/j.tsf.2016.02.050

M3 - 文章

AN - SCOPUS:84959552245

SN - 0040-6090

VL - 618

SP - 184

EP - 188

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Anomalous magnetic properties of Mn-implanted InN thin films

Abstract

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Keywords

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