Application of Gallium Nitride Technology in Particle Therapy Imaging

Vimal Kant Pandey, Cher Ming Tan

Research output: Contribution to journalJournal Article peer-review

8 Scopus citations

Abstract

A transimpedance amplifier (TIA) is an essential electronic circuit in prompt gamma detection. To improve the performance and reliability of the electronics, we designed a TIA using GaN high electron mobility transistor (HEMT) as it is more radiation-hardened when compared to its silicon counterpart and it has lower noise. Our circuit is designed using GaN HEMT from efficient power conversion (EPC) and has a 3-dB frequency of 21 MHz and 45 dB Ω of transimpedance gain. Its total output rms noise voltage is 3.1 mV. Its functionality is verified using a Lu-176 radiation source, and experimental result shows that the current generated from the H12700 position-sensitive photomultiplier tube (PSPMT) detector when the gamma radiation hits the scintillator crystal is successfully converted into voltage with the gain in agreement with our simulation result. Comparison of this GaN-based TIA with the reported silicon-based TIA shows superior performances for particle therapy imaging. The circuit is also tested under 100-MeV proton radiation with a fluence of 1.6× 1011 cm-2} and flux of 1.14× 108 cm-2} s-1, and negligible variations in the linearity and gain in the postradiation measurements are observed.

Original languageEnglish
Article number9400860
Pages (from-to)1319-1324
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume68
Issue number6
DOIs
StatePublished - 06 2021

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

  • GaN high electron mobility transistor (HEMT)
  • position-sensitive photomultiplier tube (PSPMT)
  • prompt gamma imaging
  • proton beam therapy
  • transimpedance amplifier (TIA)

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