Application of modified transmission line model to measure p -type GaN contact

N. C. Chen; C. Y. Tseng; A. P. Chiu; C. F. Shih; P. H. Chang

doi:10.1063/1.1835993

Application of modified transmission line model to measure p -type GaN contact

N. C. Chen^*, C. Y. Tseng, A. P. Chiu, C. F. Shih, P. H. Chang

^*Corresponding author for this work

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

15 Scopus citations

Abstract

This work presented a procedure for extending the modified transmission line model to measure non-ohmic contact. This method was applied to the p -type GaN contact with the resulting sheet resistance similar to that determined by the Hall measurement. The voltage-current density (V-J) curve obtained using this procedure was also similar to that by directly analyzing the current-voltage curve of a light-emitting diode. Both results revealed the validity of this procedure. Rather than yielding a specific contact resistance for an ohmic contact, this procedure yielded a V-J curve to describe the non-ohmic contact characteristics. Similarly, this procedure could also extend the linear transmission line model to the analysis of non-ohmic contacts.

Original language	English
Pages (from-to)	6086-6088
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	25
DOIs	https://doi.org/10.1063/1.1835993
State	Published - 20 12 2004

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title = "Application of modified transmission line model to measure p -type GaN contact",

abstract = "This work presented a procedure for extending the modified transmission line model to measure non-ohmic contact. This method was applied to the p -type GaN contact with the resulting sheet resistance similar to that determined by the Hall measurement. The voltage-current density (V-J) curve obtained using this procedure was also similar to that by directly analyzing the current-voltage curve of a light-emitting diode. Both results revealed the validity of this procedure. Rather than yielding a specific contact resistance for an ohmic contact, this procedure yielded a V-J curve to describe the non-ohmic contact characteristics. Similarly, this procedure could also extend the linear transmission line model to the analysis of non-ohmic contacts.",

author = "Chen, {N. C.} and Tseng, {C. Y.} and Chiu, {A. P.} and Shih, {C. F.} and Chang, {P. H.}",

year = "2004",

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doi = "10.1063/1.1835993",

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T1 - Application of modified transmission line model to measure p -type GaN contact

AU - Chen, N. C.

AU - Tseng, C. Y.

AU - Chiu, A. P.

AU - Shih, C. F.

AU - Chang, P. H.

PY - 2004/12/20

Y1 - 2004/12/20

N2 - This work presented a procedure for extending the modified transmission line model to measure non-ohmic contact. This method was applied to the p -type GaN contact with the resulting sheet resistance similar to that determined by the Hall measurement. The voltage-current density (V-J) curve obtained using this procedure was also similar to that by directly analyzing the current-voltage curve of a light-emitting diode. Both results revealed the validity of this procedure. Rather than yielding a specific contact resistance for an ohmic contact, this procedure yielded a V-J curve to describe the non-ohmic contact characteristics. Similarly, this procedure could also extend the linear transmission line model to the analysis of non-ohmic contacts.

AB - This work presented a procedure for extending the modified transmission line model to measure non-ohmic contact. This method was applied to the p -type GaN contact with the resulting sheet resistance similar to that determined by the Hall measurement. The voltage-current density (V-J) curve obtained using this procedure was also similar to that by directly analyzing the current-voltage curve of a light-emitting diode. Both results revealed the validity of this procedure. Rather than yielding a specific contact resistance for an ohmic contact, this procedure yielded a V-J curve to describe the non-ohmic contact characteristics. Similarly, this procedure could also extend the linear transmission line model to the analysis of non-ohmic contacts.

UR - http://www.scopus.com/inward/record.url?scp=20444460332&partnerID=8YFLogxK

U2 - 10.1063/1.1835993

DO - 10.1063/1.1835993

M3 - 文章

AN - SCOPUS:20444460332

SN - 0003-6951

VL - 85

SP - 6086

EP - 6088

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Application of modified transmission line model to measure p -type GaN contact

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