Application of modified transmission line model to measure p -type GaN contact

This work presented a procedure for extending the modified transmission line model to measure non-ohmic contact. This method was applied to the p -type GaN contact with the resulting sheet resistance similar to that determined by the Hall measurement. The voltage-current density (V-J) curve obtained using this procedure was also similar to that by directly analyzing the current-voltage curve of a light-emitting diode. Both results revealed the validity of this procedure. Rather than yielding a specific contact resistance for an ohmic contact, this procedure yielded a V-J curve to describe the non-ohmic contact characteristics. Similarly, this procedure could also extend the linear transmission line model to the analysis of non-ohmic contacts.