Applications of finite element methods for reliability study of ULSI interconnections

Cher Ming Tan*, Wei Li, Zhenghao Gan

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

8 Scopus citations

Abstract

Three main failure mechanisms of ULSI interconnects are the electromigration (EM), stress induced voiding (SIV) and low-k dielectric breakdown. Reliability tests for these mechanisms are too long to meet the development time requirement, and the underlying dominant mechanisms cannot be identified, rendering difficulty in design-in reliability for integrated circuit. Facing the challenges in the reliability study of the interconnect system, physics based simulation and modeling is found to be essential, and finite element method (FEM) is a suitable tool. A few examples on the application of FEM to study the degradation processes and identification of potential failure sites in interconnects due to EM and SIV are given here. The study of the process induced degradation of the effective k value of low-k dielectric in ULSI interconnect system using FEM is also presented.

Original languageEnglish
Pages (from-to)1539-1545
Number of pages7
JournalMicroelectronics Reliability
Volume52
Issue number8
DOIs
StatePublished - 08 2012
Externally publishedYes

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