Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate

M. Boutchich*, H. Arezki, D. Alamarguy, K. I. Ho, H. Sediri, F. Güneş, J. Alvarez, J. P. Kleider, C. S. Lai, A. Ouerghi

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

32 Scopus citations

Abstract

Large-area graphene film doped with nitrogen is of great interest for a wide spectrum of nanoelectronics applications, such as field effect devices, super capacitors, and fuel cells among many others. Here, we report on the structural and electronic properties of nitrogen doped trilayer graphene on 4H-SiC (0001) grown under atmospheric pressure. The trilayer nature of the growth is evidenced by scanning transmission electron microscopy. X-ray photoelectron spectroscopy shows the incorporation of 1.2% of nitrogen distributed in pyrrolic-N, and pyridinic-N configurations as well as a graphitic-N contribution. This incorporation causes an increase in the D band on the Raman signature indicating that the nitrogen is creating defects. Ultraviolet photoelectron spectroscopy shows a decrease of the work function of 0.3 eV due to the N-type doping of the nitrogen atoms in the carbon lattice and the edge defects. A top gate field effect transistor device has been fabricated and exhibits carrier mobilities up to 1300 cm2/V s for holes and 850 cm2/V s for electrons at room temperature.

Original languageEnglish
Article number233111
JournalApplied Physics Letters
Volume105
Issue number23
DOIs
StatePublished - 08 12 2014

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