Atomic layer deposition hafnium oxide film on electrolyte-insulator-semiconductorstructure for urea sensor application

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2011
Event	International Electron Device and Materials Symposium (IEDMS 2011) - Taipei, Taiwan Duration: 17 11 2011 → 18 11 2011

Conference	International Electron Device and Materials Symposium (IEDMS 2011)
Period	17/11/11 → 18/11/11

Cite this

@conference{bde2e4d678794fd794c22a1fb032bc64,

title = "Atomic layer deposition hafnium oxide film on electrolyte-insulator-semiconductorstructure for urea sensor application",

author = "Tseng-Fu Lu and I-Shun Wang and Wen-Yu Chuang and Pijanowska, \{Dorota G.\} and Chia-Ming Yang and Jer-Chyi Wang and Chao-Sung Lai",

year = "2011",

language = "American English",

note = "International Electron Device and Materials Symposium (IEDMS 2011) ; Conference date: 17-11-2011 Through 18-11-2011",

}

TY - CONF

T1 - Atomic layer deposition hafnium oxide film on electrolyte-insulator-semiconductorstructure for urea sensor application

AU - Lu, Tseng-Fu

AU - Wang, I-Shun

AU - Chuang, Wen-Yu

AU - Pijanowska, Dorota G.

AU - Yang, Chia-Ming

AU - Wang, Jer-Chyi

AU - Lai, Chao-Sung

PY - 2011

Y1 - 2011

M3 - Proceeding

T2 - International Electron Device and Materials Symposium (IEDMS 2011)

Y2 - 17 November 2011 through 18 November 2011

ER -