Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

Huan Yu Shih, Fu Chuan Chu, Atanu Das, Chia Yu Lee, Ming Jang Chen, Ray Ming Lin*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

72 Scopus citations

Abstract

In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3–GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal–oxide–semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade–1 and 3.62 × 1011 eV–1 cm–2, respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT.

Original languageEnglish
Article number235
JournalNanoscale Research Letters
Volume11
Issue number1
DOIs
StatePublished - 01 12 2016

Bibliographical note

Publisher Copyright:
© 2016, Shih et al.

Keywords

  • GaN
  • GaO
  • MOCVD
  • Metal–oxide–semiconductor high-electron-mobility transistor (MOS-HEMT)
  • Remote plasma atomic layer deposition (RP-ALD)

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