Atomic layer epitaxial growth of ZnS_xSe_1-x on Si substrate

Physics

• Growth 100%
• Substrates 100%
• Emission 66%
• Quality 33%
• Temperature 33%
• Solid State 33%
• Pressure 33%
• Region 33%
• Low Pressure 33%
• Spectra 33%
• X Ray Diffraction 33%
• Atomic Layer Epitaxy 33%
• Vapor 33%
• Metalorganic Chemical Vapor Deposition 33%

Material Science

• Epitaxy 100%
• Epitaxial Layer 100%
• Temperature 33%
• X-Ray Diffraction 33%
• Surface Morphology 33%
• Solid 33%
• Vapor 33%
• Metal-Organic Chemical Vapor Deposition 33%
• Linewidth 33%

Engineering

• Growth Pressure 33%