TY - JOUR
T1 - Atomic layer epitaxy growth of ZnSxSe1-x epitaxial layers lattice-matched to Si substrates
AU - Chen, Nyen Ts
AU - Yokoyama, Meiso
AU - Ueng, Herng Yih
PY - 2000/6/15
Y1 - 2000/6/15
N2 - Optical, crystallographic and transport properties of nominally undoped n-type ZnSxSe1-x/Si grown by atomic layer epitaxy have been studied. The lattice of a ZnSxSe1-x layer with a sulfur content estimated to be about 93% is found to have the best match to the Si substrate, as indicated by XRD, PL and electrical measurements. A narrow X-ray diffraction rocking curve line-width with a minimal FWHM of about 0.16° was observed. PL spectra, obtained at 7 and 300 K, exhibited a strong near band-edge emission and weak deep-level emissions in the longer wavelength region for the ZnS0.93Se0.07 epitaxial layer. Schottky diodes were fabricated from the undoped ZnSxSe1-x layer and the electrical properties were measured at room temperature. From the current-voltage (I-V) characteristics, a high reverse breakdown voltage (>40 V) and an extremely low cut-in voltage of 0.68 V were obtained with ZnS0.93Se0.07. In addition, a Hall mobility of 347 cm2/V s was determined by the Van der Pauw method. These results indicate a good lattice-match of ZnS0.93Se0.07/Si as a result of low numbers of interface and epitaxial layer defects.
AB - Optical, crystallographic and transport properties of nominally undoped n-type ZnSxSe1-x/Si grown by atomic layer epitaxy have been studied. The lattice of a ZnSxSe1-x layer with a sulfur content estimated to be about 93% is found to have the best match to the Si substrate, as indicated by XRD, PL and electrical measurements. A narrow X-ray diffraction rocking curve line-width with a minimal FWHM of about 0.16° was observed. PL spectra, obtained at 7 and 300 K, exhibited a strong near band-edge emission and weak deep-level emissions in the longer wavelength region for the ZnS0.93Se0.07 epitaxial layer. Schottky diodes were fabricated from the undoped ZnSxSe1-x layer and the electrical properties were measured at room temperature. From the current-voltage (I-V) characteristics, a high reverse breakdown voltage (>40 V) and an extremely low cut-in voltage of 0.68 V were obtained with ZnS0.93Se0.07. In addition, a Hall mobility of 347 cm2/V s was determined by the Van der Pauw method. These results indicate a good lattice-match of ZnS0.93Se0.07/Si as a result of low numbers of interface and epitaxial layer defects.
UR - http://www.scopus.com/inward/record.url?scp=0033700873&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(00)00433-4
DO - 10.1016/S0022-0248(00)00433-4
M3 - 文章
AN - SCOPUS:0033700873
SN - 0022-0248
VL - 216
SP - 152
EP - 158
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -