AZO transparent thin film with E-gun evaporate procedure and application on light emitting diode

Chia Hsuan Wu; Che Kai Lin; Chao Wei Lin; Hsien Chin Chiu

doi:10.1109/ICSICT.2008.4734716

AZO transparent thin film with E-gun evaporate procedure and application on light emitting diode

Chia Hsuan Wu^*
, Che Kai Lin
, Chao Wei Lin
, Hsien Chin Chiu

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study we manufacture AZO transparent thin films with E-gun evaporator and change the flow rate of o×ygen to find which parameter can fabricate the best quality AZO thin films. After analyze the material characteristics of AZO thin films we fabricated. We can acquire the best parameter is heating the substrate to 150°C and without o×ygen flow. With this parameter, we can obtain AZO thin film with transparency above 90% and e×tremely low resistivity reach to 2.4×10^-4 (ohm-cm). Apply its on light emitting diode can also get large profit in luminescence.

Original language	English
Title of host publication	ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages	1048-1051
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.2008.4734716
State	Published - 2008
Event	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China Duration: 20 10 2008 → 23 10 2008

Publication series

Name	International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Conference

Conference	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Country/Territory	China
City	Beijing
Period	20/10/08 → 23/10/08

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10.1109/ICSICT.2008.4734716

Cite this

Wu, C. H., Lin, C. K., Lin, C. W., & Chiu, H. C. (2008). AZO transparent thin film with E-gun evaporate procedure and application on light emitting diode. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 1048-1051). Article 4734716 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734716

Wu, Chia Hsuan ; Lin, Che Kai ; Lin, Chao Wei et al. / AZO transparent thin film with E-gun evaporate procedure and application on light emitting diode. ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. pp. 1048-1051 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

@inproceedings{c359c37b257a41b5b59c54206e2f7081,

title = "AZO transparent thin film with E-gun evaporate procedure and application on light emitting diode",

abstract = "In this study we manufacture AZO transparent thin films with E-gun evaporator and change the flow rate of o{\texttimes}ygen to find which parameter can fabricate the best quality AZO thin films. After analyze the material characteristics of AZO thin films we fabricated. We can acquire the best parameter is heating the substrate to 150°C and without o{\texttimes}ygen flow. With this parameter, we can obtain AZO thin film with transparency above 90\% and e{\texttimes}tremely low resistivity reach to 2.4{\texttimes}10-4 (ohm-cm). Apply its on light emitting diode can also get large profit in luminescence.",

author = "Wu, \{Chia Hsuan\} and Lin, \{Che Kai\} and Lin, \{Chao Wei\} and Chiu, \{Hsien Chin\}",

year = "2008",

doi = "10.1109/ICSICT.2008.4734716",

language = "英语",

isbn = "9781424421855",

series = "International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT",

pages = "1048--1051",

booktitle = "ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings",

note = "2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 ; Conference date: 20-10-2008 Through 23-10-2008",

}

Wu, CH, Lin, CK, Lin, CW & Chiu, HC 2008, AZO transparent thin film with E-gun evaporate procedure and application on light emitting diode. in ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings., 4734716, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, pp. 1048-1051, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, China, 20/10/08. https://doi.org/10.1109/ICSICT.2008.4734716

AZO transparent thin film with E-gun evaporate procedure and application on light emitting diode. / Wu, Chia Hsuan; Lin, Che Kai; Lin, Chao Wei et al.
ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 1048-1051 4734716 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - AZO transparent thin film with E-gun evaporate procedure and application on light emitting diode

AU - Wu, Chia Hsuan

AU - Lin, Che Kai

AU - Lin, Chao Wei

AU - Chiu, Hsien Chin

PY - 2008

Y1 - 2008

N2 - In this study we manufacture AZO transparent thin films with E-gun evaporator and change the flow rate of o×ygen to find which parameter can fabricate the best quality AZO thin films. After analyze the material characteristics of AZO thin films we fabricated. We can acquire the best parameter is heating the substrate to 150°C and without o×ygen flow. With this parameter, we can obtain AZO thin film with transparency above 90% and e×tremely low resistivity reach to 2.4×10-4 (ohm-cm). Apply its on light emitting diode can also get large profit in luminescence.

AB - In this study we manufacture AZO transparent thin films with E-gun evaporator and change the flow rate of o×ygen to find which parameter can fabricate the best quality AZO thin films. After analyze the material characteristics of AZO thin films we fabricated. We can acquire the best parameter is heating the substrate to 150°C and without o×ygen flow. With this parameter, we can obtain AZO thin film with transparency above 90% and e×tremely low resistivity reach to 2.4×10-4 (ohm-cm). Apply its on light emitting diode can also get large profit in luminescence.

UR - https://www.scopus.com/pages/publications/60649088920

U2 - 10.1109/ICSICT.2008.4734716

DO - 10.1109/ICSICT.2008.4734716

M3 - 会议稿件

AN - SCOPUS:60649088920

SN - 9781424421855

T3 - International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

SP - 1048

EP - 1051

BT - ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings

T2 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008

Y2 - 20 October 2008 through 23 October 2008

ER -

Wu CH, Lin CK, Lin CW, Chiu HC. AZO transparent thin film with E-gun evaporate procedure and application on light emitting diode. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 1048-1051. 4734716. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). doi: 10.1109/ICSICT.2008.4734716

AZO transparent thin film with E-gun evaporate procedure and application on light emitting diode

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