Band alignments in sidewall strained Si/strained SiGe heterostructures

X. Wang*, D. L. Kencke, K. C. Liu, L. F. Register, S. K. Banerjee

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

4 Scopus citations


The band edge shift and splitting in an orthorhombically strained Si (OS-Si) layer grown on the sidewall of a compressively strained SiGe (CS-SiGe) alloy is calculated in terms of model-solid theory. Both the valence and conduction band edges of the OS-Si are predicted to be lower than those of CS-SiGe. Compared with tensily strained Si grown on a relaxed SiGe alloy, the conduction band offset between OS-Si and CS-SiGe is smaller, while the valence band offset is larger.

Original languageEnglish
Pages (from-to)2021-2025
Number of pages5
JournalSolid-State Electronics
Issue number12
StatePublished - 12 2002
Externally publishedYes


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