Band alignments in sidewall strained Si/strained SiGe heterostructures

X. Wang; D. L. Kencke; K. C. Liu; L. F. Register; S. K. Banerjee

doi:10.1016/S0038-1101(02)00247-2

Band alignments in sidewall strained Si/strained SiGe heterostructures

X. Wang^*, D. L. Kencke, K. C. Liu, L. F. Register, S. K. Banerjee

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

4 Scopus citations

Abstract

The band edge shift and splitting in an orthorhombically strained Si (OS-Si) layer grown on the sidewall of a compressively strained SiGe (CS-SiGe) alloy is calculated in terms of model-solid theory. Both the valence and conduction band edges of the OS-Si are predicted to be lower than those of CS-SiGe. Compared with tensily strained Si grown on a relaxed SiGe alloy, the conduction band offset between OS-Si and CS-SiGe is smaller, while the valence band offset is larger.

Original language	English
Pages (from-to)	2021-2025
Number of pages	5
Journal	Solid-State Electronics
Volume	46
Issue number	12
DOIs	https://doi.org/10.1016/S0038-1101(02)00247-2
State	Published - 12 2002
Externally published	Yes

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title = "Band alignments in sidewall strained Si/strained SiGe heterostructures",

abstract = "The band edge shift and splitting in an orthorhombically strained Si (OS-Si) layer grown on the sidewall of a compressively strained SiGe (CS-SiGe) alloy is calculated in terms of model-solid theory. Both the valence and conduction band edges of the OS-Si are predicted to be lower than those of CS-SiGe. Compared with tensily strained Si grown on a relaxed SiGe alloy, the conduction band offset between OS-Si and CS-SiGe is smaller, while the valence band offset is larger.",

author = "X. Wang and Kencke, {D. L.} and Liu, {K. C.} and Register, {L. F.} and Banerjee, {S. K.}",

year = "2002",

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doi = "10.1016/S0038-1101(02)00247-2",

language = "英语",

volume = "46",

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journal = "Solid-State Electronics",

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T1 - Band alignments in sidewall strained Si/strained SiGe heterostructures

AU - Wang, X.

AU - Kencke, D. L.

AU - Liu, K. C.

AU - Register, L. F.

AU - Banerjee, S. K.

PY - 2002/12

Y1 - 2002/12

N2 - The band edge shift and splitting in an orthorhombically strained Si (OS-Si) layer grown on the sidewall of a compressively strained SiGe (CS-SiGe) alloy is calculated in terms of model-solid theory. Both the valence and conduction band edges of the OS-Si are predicted to be lower than those of CS-SiGe. Compared with tensily strained Si grown on a relaxed SiGe alloy, the conduction band offset between OS-Si and CS-SiGe is smaller, while the valence band offset is larger.

AB - The band edge shift and splitting in an orthorhombically strained Si (OS-Si) layer grown on the sidewall of a compressively strained SiGe (CS-SiGe) alloy is calculated in terms of model-solid theory. Both the valence and conduction band edges of the OS-Si are predicted to be lower than those of CS-SiGe. Compared with tensily strained Si grown on a relaxed SiGe alloy, the conduction band offset between OS-Si and CS-SiGe is smaller, while the valence band offset is larger.

UR - http://www.scopus.com/inward/record.url?scp=0036890542&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(02)00247-2

DO - 10.1016/S0038-1101(02)00247-2

M3 - 文章

AN - SCOPUS:0036890542

SN - 0038-1101

VL - 46

SP - 2021

EP - 2025

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 12

ER -

Band alignments in sidewall strained Si/strained SiGe heterostructures

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