Band offsets of InN/GaN interface

Chuan Feng Shih, Nie Chuan Chen, Pen Hsiu Chang*, Kuo Shung Liu

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

40 Scopus citations

Abstract

In this paper, we report on the band discontinuities of the wurtzite-InN/GaN interface. X-ray photoemission spectroscopy studies reveal that the offset ratios of conduction bands and valence bands are approximately 80 and 20%, respectively. The valence band offset (0.5 eV) is close to the theoretical value determined on the basis of the density functional theory from first principle that was reported by Wei and Zunger [Appl. Phys. Lett. 69 (1996) 2719]. The photoluminescence signals of InN/GaN quantum wells were also studied. The luminescence of the wells showed a 60 meV quantum confinement shift from the bulk InN signal. The finite potential well model of quantum mechanics is used to show that this shift supports the above results.

Original languageEnglish
Pages (from-to)7892-7895
Number of pages4
JournalJapanese Journal of Applied Physics
Volume44
Issue number11
DOIs
StatePublished - 09 11 2005

Keywords

  • InN
  • MOVPE
  • PL
  • VBO
  • XPS

Fingerprint

Dive into the research topics of 'Band offsets of InN/GaN interface'. Together they form a unique fingerprint.

Cite this