Band offsets of ln0.30Ga0.70As/ln0.29AI0.71As heterojunction grown oh GaAs substrate

J. L. Shieh; J. L. Chyi; R. J. Lin; R. M. Lin; J. W. Pan

doi:10.1049/el:19941445

Band offsets of ln^0.30Ga^0.70As/ln^0.29AI^0.71As heterojunction grown oh GaAs substrate

J. L. Shieh, J. L. Chyi, R. J. Lin, R. M. Lin, J. W. Pan

National Central University

Research output: Contribution to journal › Journal Article › peer-review

11 Scopus citations

Abstract

Temperature-dependent current-voltage measurement was employed to study the band offsets of the In^0.30Ga^0.70As/In^0.29Al^0.71As heterojunction. The conduction band discontinuity was determined to be 0.71 ± 0.05 eV which corresponds to a conduction band offset to bandgap difference ratio of ~0.66. The comparison between experimental and theoretical results is presented.

Original language	English
Pages (from-to)	2172-2173
Number of pages	2
Journal	Electronics Letters
Volume	30
Issue number	25
DOIs	https://doi.org/10.1049/el:19941445
State	Published - 24 11 1994
Externally published	Yes

Keywords

Band structure
Gallium indium arsenide
Semiconductor junctions

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10.1049/el:19941445

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title = "Band offsets of ln0.30Ga0.70As/ln0.29AI0.71As heterojunction grown oh GaAs substrate",

abstract = "Temperature-dependent current-voltage measurement was employed to study the band offsets of the In0.30Ga0.70As/In0.29Al0.71As heterojunction. The conduction band discontinuity was determined to be 0.71 ± 0.05 eV which corresponds to a conduction band offset to bandgap difference ratio of \textasciitilde{}0.66. The comparison between experimental and theoretical results is presented.",

keywords = "Band structure, Gallium indium arsenide, Semiconductor junctions",

author = "Shieh, \{J. L.\} and Chyi, \{J. L.\} and Lin, \{R. J.\} and Lin, \{R. M.\} and Pan, \{J. W.\}",

year = "1994",

month = nov,

day = "24",

doi = "10.1049/el:19941445",

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volume = "30",

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journal = "Electronics Letters",

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T1 - Band offsets of ln0.30Ga0.70As/ln0.29AI0.71As heterojunction grown oh GaAs substrate

AU - Shieh, J. L.

AU - Chyi, J. L.

AU - Lin, R. J.

AU - Lin, R. M.

AU - Pan, J. W.

PY - 1994/11/24

Y1 - 1994/11/24

N2 - Temperature-dependent current-voltage measurement was employed to study the band offsets of the In0.30Ga0.70As/In0.29Al0.71As heterojunction. The conduction band discontinuity was determined to be 0.71 ± 0.05 eV which corresponds to a conduction band offset to bandgap difference ratio of ~0.66. The comparison between experimental and theoretical results is presented.

AB - Temperature-dependent current-voltage measurement was employed to study the band offsets of the In0.30Ga0.70As/In0.29Al0.71As heterojunction. The conduction band discontinuity was determined to be 0.71 ± 0.05 eV which corresponds to a conduction band offset to bandgap difference ratio of ~0.66. The comparison between experimental and theoretical results is presented.

KW - Band structure

KW - Gallium indium arsenide

KW - Semiconductor junctions

UR - https://www.scopus.com/pages/publications/0028768718

U2 - 10.1049/el:19941445

DO - 10.1049/el:19941445

M3 - 文章

AN - SCOPUS:0028768718

SN - 0013-5194

VL - 30

SP - 2172

EP - 2173

JO - Electronics Letters

JF - Electronics Letters

IS - 25

ER -

Band offsets of ln^0.30Ga^0.70As/ln^0.29AI^0.71As heterojunction grown oh GaAs substrate

Abstract

Keywords

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