Barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes prepared by P2S5/(NH4)2Sx and HF treatments

Ming Jer Jeng; Hung Tsung Wang; Liann Be Chang; Yi Chang Cheng; Shu Tsun Chou

doi:10.1063/1.371682

Barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes prepared by P₂S₅/(NH₄)₂S_x and HF treatments

Ming Jer Jeng^*, Hung Tsung Wang, Liann Be Chang, Yi Chang Cheng, Shu Tsun Chou

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

19 Scopus citations

Abstract

A method for surface passivation using both the phosphorus sulfide/ammonia sulfide [P₂S₅/(NH₄)₂S_x] solution and hydrogen fluoride (HF) solution has shown great effectiveness on the barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes. It is found that, even though the Ag/n-GaAs and Ag/M-InP diodes were baked for 18 h at 300°C, their Schottky barriers could still reach as high as 1.1 and 0.95 eV, respectively. After the bare semiconductor substrates were bathed successively in P₂S₅/(NH₄)₂S_x and HF solutions and then shone by an ultraviolet light, the analysis with x-ray photoelectron spectroscopy indicates a possible formation of ultrathin and stable sulfur fluoride or phosphorus fluoride layers on the substrate surfaces. The formation of these stable interface layers has been attributed to the enhancement of Schottky barrier heights.

Original language	English
Pages (from-to)	6261-6263
Number of pages	3
Journal	Journal of Applied Physics
Volume	86
Issue number	11
DOIs	https://doi.org/10.1063/1.371682
State	Published - 12 1999
Externally published	Yes

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title = "Barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes prepared by P2S5/(NH4)2Sx and HF treatments",

abstract = "A method for surface passivation using both the phosphorus sulfide/ammonia sulfide [P2S5/(NH4)2Sx] solution and hydrogen fluoride (HF) solution has shown great effectiveness on the barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes. It is found that, even though the Ag/n-GaAs and Ag/M-InP diodes were baked for 18 h at 300°C, their Schottky barriers could still reach as high as 1.1 and 0.95 eV, respectively. After the bare semiconductor substrates were bathed successively in P2S5/(NH4)2Sx and HF solutions and then shone by an ultraviolet light, the analysis with x-ray photoelectron spectroscopy indicates a possible formation of ultrathin and stable sulfur fluoride or phosphorus fluoride layers on the substrate surfaces. The formation of these stable interface layers has been attributed to the enhancement of Schottky barrier heights.",

author = "Jeng, {Ming Jer} and Wang, {Hung Tsung} and Chang, {Liann Be} and Cheng, {Yi Chang} and Chou, {Shu Tsun}",

year = "1999",

month = dec,

doi = "10.1063/1.371682",

language = "英语",

volume = "86",

pages = "6261--6263",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

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TY - JOUR

T1 - Barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes prepared by P2S5/(NH4)2Sx and HF treatments

AU - Jeng, Ming Jer

AU - Wang, Hung Tsung

AU - Chang, Liann Be

AU - Cheng, Yi Chang

AU - Chou, Shu Tsun

PY - 1999/12

Y1 - 1999/12

N2 - A method for surface passivation using both the phosphorus sulfide/ammonia sulfide [P2S5/(NH4)2Sx] solution and hydrogen fluoride (HF) solution has shown great effectiveness on the barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes. It is found that, even though the Ag/n-GaAs and Ag/M-InP diodes were baked for 18 h at 300°C, their Schottky barriers could still reach as high as 1.1 and 0.95 eV, respectively. After the bare semiconductor substrates were bathed successively in P2S5/(NH4)2Sx and HF solutions and then shone by an ultraviolet light, the analysis with x-ray photoelectron spectroscopy indicates a possible formation of ultrathin and stable sulfur fluoride or phosphorus fluoride layers on the substrate surfaces. The formation of these stable interface layers has been attributed to the enhancement of Schottky barrier heights.

AB - A method for surface passivation using both the phosphorus sulfide/ammonia sulfide [P2S5/(NH4)2Sx] solution and hydrogen fluoride (HF) solution has shown great effectiveness on the barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes. It is found that, even though the Ag/n-GaAs and Ag/M-InP diodes were baked for 18 h at 300°C, their Schottky barriers could still reach as high as 1.1 and 0.95 eV, respectively. After the bare semiconductor substrates were bathed successively in P2S5/(NH4)2Sx and HF solutions and then shone by an ultraviolet light, the analysis with x-ray photoelectron spectroscopy indicates a possible formation of ultrathin and stable sulfur fluoride or phosphorus fluoride layers on the substrate surfaces. The formation of these stable interface layers has been attributed to the enhancement of Schottky barrier heights.

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U2 - 10.1063/1.371682

DO - 10.1063/1.371682

M3 - 文章

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SN - 0021-8979

VL - 86

SP - 6261

EP - 6263

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes prepared by P₂S₅/(NH₄)₂S_x and HF treatments

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