Base pressure effects on the structure, surface roughness and electrical resistivity of Mo thin films by RF magnetron sputtering

Ming Jer Jeng, Wen Kai Lei, Wei Lun Ku, Liann Be Chang, Ching Wen Wu, Yong Tian Lu, Sung Cheng Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Molybdenum (Mo) thin films were deposited on soda-lime glass substrate by using RF magnetron sputtering. As is well known, base pressure in sputtering is a processing parameter for preparing high quality Mo films, in addition to RF power and working pressure. The structure, surface roughness and electrical resistivity of Mo thin films were investigated at three base pressures of 1.8×10-7, 5.8×10-7and 2.7×10 -6 torr. Experimental results indicate that the Mo films deposited at a low base pressure of 1.8×10-7 torr exhibit a low electrical resistivity of 8.9×10-6 Ωcm, a low root mean square value of roughness of 4.92nm and a stronger peak intensity of (110) plane than that of the other two pressures. This finding suggests that Mo films sputtered at a low base pressure have higher crystallinity, larger grain size, smoother surface morphology and lower electrical resistivity than those sputtered at a high base pressure.

Original languageEnglish
Title of host publicationAdvanced Materials Research
Pages161-165
Number of pages5
DOIs
StatePublished - 2011
Event2011 International Conference on Advanced Material Research, ICAMR 2011 - Chongqing, China
Duration: 21 01 201123 01 2011

Publication series

NameAdvanced Materials Research
Volume213
ISSN (Print)1022-6680

Conference

Conference2011 International Conference on Advanced Material Research, ICAMR 2011
Country/TerritoryChina
CityChongqing
Period21/01/1123/01/11

Keywords

  • Base pressure
  • Molybdenum (Mo) thin films
  • RF magnetron sputtering
  • Surface roughness

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