BaxSr1−xTiO3 sensing membrane in electrolyte-insulator-semiconductor structure with rapid thermal annealing in N2 ambient

  • Chyuan Haur Kao
  • , Wang Ting Chiu
  • , Yi Cian Chen
  • , Luo Yang
  • , Shin Chieh Tsai
  • , Ting Wei Chang
  • , Ching Tsan Tsai
  • , Chan Yu Lin
  • , Hsiang Chen*
  • *Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

1 Scopus citations

Abstract

Ion-sensitive field - effect transistor (ISFET) biosensors were fabricated with a pH-sensitive BaxSr1−xTiO3 membrane on silicon substrates in an Electrolyte-Insulator-Semiconductor (EIS) structure. To investigate the effects of annealing in N2 ambient, multiple material analyses including XRD and AFM were performed. Results indicate that the annealing treatment might deteriorate the crystallization. Therefore, the sensing behaviours in terms of sensitivity, linearity, hysteresis effects, and drift rates might be worsened. In this research, BaxSr1−xTiO3 membranes in an EIS structure with a high sensitivity and linearity were made. However, owing to its special and complicated structures, high-temperature thermal annealing was not suitable for the BaxSr1−xTiO3 membrane to further boost its sensing capability.

Original languageEnglish
Pages (from-to)3-6
Number of pages4
JournalVacuum
Volume140
DOIs
StatePublished - 01 06 2017

Bibliographical note

Publisher Copyright:
© 2016 Elsevier Ltd

Keywords

  • Annealing
  • BaSrTiO
  • Electrolyte-insulator-semiconductor
  • Nitrogen ambient
  • pH values

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