Behavior of hot carrier generation in power SOI LDNMOS with shallow trench isolation (STI)

Jie Liao*, Cher Ming Tan, Geert Spierings

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

8 Scopus citations

Abstract

In this work, we investigated the hot carrier (HC) generation of power silicon-on-insulator (SOI) lateral double-diffused N-type MOSFETs (LDNMOSFET) with shallow trench isolation (STI) structure under different biasing conditions. Experimental measurements of drain and substrate currents are done. Two-dimensional (2-D) device simulation is performed to provide a better insight on the electrical behaviors of the device by looking at the electric-field (EF), electron current density (JE) and impact ionization generation rate (RII) distributions in the devices. The high RII site is found to be near the STI corner instead of near the channel or field oxide area close to the gate surface in standard small signal MOSFET.

Original languageEnglish
Pages (from-to)1038-1043
Number of pages6
JournalMicroelectronics Reliability
Volume49
Issue number9-11
DOIs
StatePublished - 09 2009
Externally publishedYes

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