Bending effect of Si MOSFETs on flexible plastic substrate

H. L. Kao; Y. C. Chang; B. S. Lin; M. H. Huang; C. H. Kao

doi:10.1109/ICCDCS.2008.4542621

Bending effect of Si MOSFETs on flexible plastic substrate

H. L. Kao
, Y. C. Chang
, B. S. Lin
, M. H. Huang
, C. H. Kao

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

By applying ∼0.27% tensile strain to the flexible die of a 0.16 μm thin-body (100 μm) Si MOSFET mounted on plastic, the DC characteristics have been improved. The small DC performance degradation of the Si MOSFET transferred to plastic shows the potential of integrating electronics onto plastic. The device performance was improved by flexing the substrate to create stress, which produced a 10.7% enhancement of the saturation drain current and only 0.003V V^th is lower. The approach has the advantages of flexible electronics on the insulating plastic substrate and low cost.

Original language	English
Title of host publication	Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS
DOIs	https://doi.org/10.1109/ICCDCS.2008.4542621
State	Published - 2008
Event	7th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS - Cancun, Mexico Duration: 28 04 2008 → 30 04 2008

Publication series

Name	Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS

Conference

Conference	7th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS
Country/Territory	Mexico
City	Cancun
Period	28/04/08 → 30/04/08

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10.1109/ICCDCS.2008.4542621

Cite this

Kao, H. L., Chang, Y. C., Lin, B. S., Huang, M. H., & Kao, C. H. (2008). Bending effect of Si MOSFETs on flexible plastic substrate. In Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS Article 4542621 (Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS). https://doi.org/10.1109/ICCDCS.2008.4542621

@inproceedings{7bdca40ffafc4b5ea4ea3f5653e22a3e,

title = "Bending effect of Si MOSFETs on flexible plastic substrate",

abstract = "By applying ∼0.27\% tensile strain to the flexible die of a 0.16 μm thin-body (100 μm) Si MOSFET mounted on plastic, the DC characteristics have been improved. The small DC performance degradation of the Si MOSFET transferred to plastic shows the potential of integrating electronics onto plastic. The device performance was improved by flexing the substrate to create stress, which produced a 10.7\% enhancement of the saturation drain current and only 0.003V Vth is lower. The approach has the advantages of flexible electronics on the insulating plastic substrate and low cost.",

author = "Kao, \{H. L.\} and Chang, \{Y. C.\} and Lin, \{B. S.\} and Huang, \{M. H.\} and Kao, \{C. H.\}",

year = "2008",

doi = "10.1109/ICCDCS.2008.4542621",

language = "英语",

isbn = "9781424419579",

series = "Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS",

booktitle = "Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS",

note = "7th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS ; Conference date: 28-04-2008 Through 30-04-2008",

}

Kao, HL, Chang, YC, Lin, BS, Huang, MH & Kao, CH 2008, Bending effect of Si MOSFETs on flexible plastic substrate. in Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS., 4542621, Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS, 7th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS, Cancun, Mexico, 28/04/08. https://doi.org/10.1109/ICCDCS.2008.4542621

Bending effect of Si MOSFETs on flexible plastic substrate. / Kao, H. L.; Chang, Y. C.; Lin, B. S. et al.
Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS. 2008. 4542621 (Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Bending effect of Si MOSFETs on flexible plastic substrate

AU - Kao, H. L.

AU - Chang, Y. C.

AU - Lin, B. S.

AU - Huang, M. H.

AU - Kao, C. H.

PY - 2008

Y1 - 2008

N2 - By applying ∼0.27% tensile strain to the flexible die of a 0.16 μm thin-body (100 μm) Si MOSFET mounted on plastic, the DC characteristics have been improved. The small DC performance degradation of the Si MOSFET transferred to plastic shows the potential of integrating electronics onto plastic. The device performance was improved by flexing the substrate to create stress, which produced a 10.7% enhancement of the saturation drain current and only 0.003V Vth is lower. The approach has the advantages of flexible electronics on the insulating plastic substrate and low cost.

AB - By applying ∼0.27% tensile strain to the flexible die of a 0.16 μm thin-body (100 μm) Si MOSFET mounted on plastic, the DC characteristics have been improved. The small DC performance degradation of the Si MOSFET transferred to plastic shows the potential of integrating electronics onto plastic. The device performance was improved by flexing the substrate to create stress, which produced a 10.7% enhancement of the saturation drain current and only 0.003V Vth is lower. The approach has the advantages of flexible electronics on the insulating plastic substrate and low cost.

UR - https://www.scopus.com/pages/publications/51049104634

U2 - 10.1109/ICCDCS.2008.4542621

DO - 10.1109/ICCDCS.2008.4542621

M3 - 会议稿件

AN - SCOPUS:51049104634

SN - 9781424419579

T3 - Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS

BT - Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS

T2 - 7th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS

Y2 - 28 April 2008 through 30 April 2008

ER -

Bending effect of Si MOSFETs on flexible plastic substrate

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