Abstract
A transparent resistive random access memory based on ITO/Gd 2O3/ITO capacitor structure is fabricated on glass substrate. The transparent memory exhibits reliable resistive switching for more than 1000 cycles, low operation voltage of -2 V/+2 V, and highly transmittance above 80% for visible light. From the TEM and XPS analysis, the asymmetry of the interfacial layer thickness is responsible for the asymmetric switching properties. The transitional multi-valance states of the bottom interfacial layer can serve as oxygen reservoir for oxygen migration back and forth under different polarity of applied bias. This work presents a candidate material Gd2O3 for the application on the T-RRAM devices.
Original language | English |
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Pages (from-to) | 1586-1589 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 88 |
Issue number | 7 |
DOIs | |
State | Published - 07 2011 |
Keywords
- Gadolinium oxide
- GdO
- RRAM
- Resistive memory
- TRRAM
- Transparent memory