Bipolar resistive switching memory characteristics using Al/Cu/GeO xW memristor

S. Maikap; S. Z. Rahaman

doi:10.1149/1.3700961

Bipolar resistive switching memory characteristics using Al/Cu/GeO _xW memristor

S. Maikap^*, S. Z. Rahaman

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

16 Scopus citations

Abstract

Low power operations of resistive switching memory using Al/Cu/GeO _x/W memristor have been reported for the first time. Under the SET process the copper ions migrate through defects into the GeO_x solid-electrolyte and there is the formation of a copper filament by reduction process. However, the RESET process or dissolution of this filament occurs by an oxidation process. Excellent uniformity with narrow distributions of SET/RESET voltages and low resistance states (LRS) are obtained. Furthermore, high resistance ratio of >10⁴ with multi-level (MLC) operation and low SET and RESET powers (∼19 and ∼ 8.36 μW) are advantages for future high density memory applications.

Original language	English
Title of host publication	Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2
Publisher	Electrochemical Society Inc.
Pages	257-261
Number of pages	5
Edition	6
ISBN (Electronic)	9781607683162
ISBN (Print)	9781566779586
DOIs	https://doi.org/10.1149/1.3700961
State	Published - 2012
Event	International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2 - 221st ES Meeting - Seattle, WA, United States Duration: 06 05 2012 → 10 05 2012

Publication series

Name	ECS Transactions
Number	6
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2 - 221st ES Meeting
Country/Territory	United States
City	Seattle, WA
Period	06/05/12 → 10/05/12

Access to Document

10.1149/1.3700961

Cite this

@inproceedings{ef1f97f7d60f4a9e9aed0dd59e3acd74,

title = "Bipolar resistive switching memory characteristics using Al/Cu/GeO xW memristor",

abstract = "Low power operations of resistive switching memory using Al/Cu/GeO x/W memristor have been reported for the first time. Under the SET process the copper ions migrate through defects into the GeOx solid-electrolyte and there is the formation of a copper filament by reduction process. However, the RESET process or dissolution of this filament occurs by an oxidation process. Excellent uniformity with narrow distributions of SET/RESET voltages and low resistance states (LRS) are obtained. Furthermore, high resistance ratio of >104 with multi-level (MLC) operation and low SET and RESET powers (∼19 and ∼ 8.36 μW) are advantages for future high density memory applications.",

author = "S. Maikap and Rahaman, {S. Z.}",

year = "2012",

doi = "10.1149/1.3700961",

language = "英语",

isbn = "9781566779586",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "6",

pages = "257--261",

booktitle = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2",

edition = "6",

note = "International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2 - 221st ES Meeting ; Conference date: 06-05-2012 Through 10-05-2012",

}

Maikap, S & Rahaman, SZ 2012, Bipolar resistive switching memory characteristics using Al/Cu/GeO _xW memristor. in Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2. 6 edn, ECS Transactions, no. 6, vol. 45, Electrochemical Society Inc., pp. 257-261, International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2 - 221st ES Meeting, Seattle, WA, United States, 06/05/12. https://doi.org/10.1149/1.3700961

Bipolar resistive switching memory characteristics using Al/Cu/GeO _xW memristor. / Maikap, S.; Rahaman, S. Z.
Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2. 6. ed. Electrochemical Society Inc., 2012. p. 257-261 (ECS Transactions; Vol. 45, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - Low power operations of resistive switching memory using Al/Cu/GeO x/W memristor have been reported for the first time. Under the SET process the copper ions migrate through defects into the GeOx solid-electrolyte and there is the formation of a copper filament by reduction process. However, the RESET process or dissolution of this filament occurs by an oxidation process. Excellent uniformity with narrow distributions of SET/RESET voltages and low resistance states (LRS) are obtained. Furthermore, high resistance ratio of >104 with multi-level (MLC) operation and low SET and RESET powers (∼19 and ∼ 8.36 μW) are advantages for future high density memory applications.

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