Bipolar resistive switching memory using bilayer TaOx/WO x films

A. Prakash, S. Maikap*, C. S. Lai, T. C. Tien, W. S. Chen, H. Y. Lee, F. T. Chen, M. J. Kao, M. J. Tsai

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

37 Scopus citations

Abstract

Resistive switching properties of a memory device in an IrO x/TaOx/WOx/W structure have been investigated. High-resolution transmission electron microscopy image has shown the formation of a bilayer structure of TaOx/WOx which is further confirmed by energy dispersive X-ray spectroscopy and X-ray photo-electron spectroscopy analyses. The underlying switching mechanism is successfully explained by providing various electrical measurements such as device area dependency on set/reset voltage and low resistance state. A model based on oxygen ions migration is then proposed. Cumulative probability plots of essential memory parameters such as set/reset voltage and LRS/HRS show good distribution. The device has shown excellent read endurance of >10 5 times and data retention of >104 s with a resistance ratio of >102 at 85 °C.

Original languageEnglish
Pages (from-to)35-40
Number of pages6
JournalSolid-State Electronics
Volume77
DOIs
StatePublished - 11 2012

Keywords

  • Bi-layer
  • Bipolar switching
  • Filamentary conduction
  • Iridium oxide (IrO)
  • Non-volatile memory
  • Resistive memory (RRAM)
  • Tantalum oxide (TaO)
  • Transition metal oxide (TMO)

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