Bipolar resistive switching memory using bilayer TaOx/WO x films

A. Prakash; S. Maikap; C. S. Lai; T. C. Tien; W. S. Chen; H. Y. Lee; F. T. Chen; M. J. Kao; M. J. Tsai

doi:10.1016/j.sse.2012.05.028

Bipolar resistive switching memory using bilayer TaO_x/WO _x films

A. Prakash
, S. Maikap^*
, C. S. Lai
, T. C. Tien
, W. S. Chen
, H. Y. Lee
, F. T. Chen
, M. J. Kao
, M. J. Tsai

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

39 Scopus citations

Abstract

Resistive switching properties of a memory device in an IrO _x/TaO_x/WO_x/W structure have been investigated. High-resolution transmission electron microscopy image has shown the formation of a bilayer structure of TaO_x/WO_x which is further confirmed by energy dispersive X-ray spectroscopy and X-ray photo-electron spectroscopy analyses. The underlying switching mechanism is successfully explained by providing various electrical measurements such as device area dependency on set/reset voltage and low resistance state. A model based on oxygen ions migration is then proposed. Cumulative probability plots of essential memory parameters such as set/reset voltage and LRS/HRS show good distribution. The device has shown excellent read endurance of >10 ⁵ times and data retention of >10⁴ s with a resistance ratio of >10² at 85 °C.

Original language	English
Pages (from-to)	35-40
Number of pages	6
Journal	Solid-State Electronics
Volume	77
DOIs	https://doi.org/10.1016/j.sse.2012.05.028
State	Published - 11 2012

Keywords

Bi-layer
Bipolar switching
Filamentary conduction
Iridium oxide (IrO)
Non-volatile memory
Resistive memory (RRAM)
Tantalum oxide (TaO)
Transition metal oxide (TMO)

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10.1016/j.sse.2012.05.028

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@article{963b0fe56d03403a8589389162a517cb,

title = "Bipolar resistive switching memory using bilayer TaOx/WO x films",

abstract = "Resistive switching properties of a memory device in an IrO x/TaOx/WOx/W structure have been investigated. High-resolution transmission electron microscopy image has shown the formation of a bilayer structure of TaOx/WOx which is further confirmed by energy dispersive X-ray spectroscopy and X-ray photo-electron spectroscopy analyses. The underlying switching mechanism is successfully explained by providing various electrical measurements such as device area dependency on set/reset voltage and low resistance state. A model based on oxygen ions migration is then proposed. Cumulative probability plots of essential memory parameters such as set/reset voltage and LRS/HRS show good distribution. The device has shown excellent read endurance of >10 5 times and data retention of >104 s with a resistance ratio of >102 at 85 °C.",

keywords = "Bi-layer, Bipolar switching, Filamentary conduction, Iridium oxide (IrO), Non-volatile memory, Resistive memory (RRAM), Tantalum oxide (TaO), Transition metal oxide (TMO)",

author = "A. Prakash and S. Maikap and Lai, \{C. S.\} and Tien, \{T. C.\} and Chen, \{W. S.\} and Lee, \{H. Y.\} and Chen, \{F. T.\} and Kao, \{M. J.\} and Tsai, \{M. J.\}",

year = "2012",

month = nov,

doi = "10.1016/j.sse.2012.05.028",

language = "英语",

volume = "77",

pages = "35--40",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Bipolar resistive switching memory using bilayer TaOx/WO x films

AU - Prakash, A.

AU - Maikap, S.

AU - Lai, C. S.

AU - Tien, T. C.

AU - Chen, W. S.

AU - Lee, H. Y.

AU - Chen, F. T.

AU - Kao, M. J.

AU - Tsai, M. J.

PY - 2012/11

Y1 - 2012/11

N2 - Resistive switching properties of a memory device in an IrO x/TaOx/WOx/W structure have been investigated. High-resolution transmission electron microscopy image has shown the formation of a bilayer structure of TaOx/WOx which is further confirmed by energy dispersive X-ray spectroscopy and X-ray photo-electron spectroscopy analyses. The underlying switching mechanism is successfully explained by providing various electrical measurements such as device area dependency on set/reset voltage and low resistance state. A model based on oxygen ions migration is then proposed. Cumulative probability plots of essential memory parameters such as set/reset voltage and LRS/HRS show good distribution. The device has shown excellent read endurance of >10 5 times and data retention of >104 s with a resistance ratio of >102 at 85 °C.

AB - Resistive switching properties of a memory device in an IrO x/TaOx/WOx/W structure have been investigated. High-resolution transmission electron microscopy image has shown the formation of a bilayer structure of TaOx/WOx which is further confirmed by energy dispersive X-ray spectroscopy and X-ray photo-electron spectroscopy analyses. The underlying switching mechanism is successfully explained by providing various electrical measurements such as device area dependency on set/reset voltage and low resistance state. A model based on oxygen ions migration is then proposed. Cumulative probability plots of essential memory parameters such as set/reset voltage and LRS/HRS show good distribution. The device has shown excellent read endurance of >10 5 times and data retention of >104 s with a resistance ratio of >102 at 85 °C.

KW - Bi-layer

KW - Bipolar switching

KW - Filamentary conduction

KW - Iridium oxide (IrO)

KW - Non-volatile memory

KW - Resistive memory (RRAM)

KW - Tantalum oxide (TaO)

KW - Transition metal oxide (TMO)

UR - https://www.scopus.com/pages/publications/84866038131

U2 - 10.1016/j.sse.2012.05.028

DO - 10.1016/j.sse.2012.05.028

M3 - 文章

AN - SCOPUS:84866038131

SN - 0038-1101

VL - 77

SP - 35

EP - 40

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Bipolar resistive switching memory using bilayer TaO_x/WO _x films

Abstract

Keywords

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