Bipolar resistive switching memory using cu metallic filament in Ge 0.4Se0.6 solid electrolyte

S. Z. Rahaman; S. Maikap; H. C. Chiu; C. H. Lin; T. Y. Wu; Y. S. Chen; P. J. Tzeng; F. Chen; M. J. Kao; M. J. Tsai

doi:10.1149/1.3339449

Bipolar resistive switching memory using cu metallic filament in Ge _0.4Se_0.6 solid electrolyte

S. Z. Rahaman, S. Maikap, H. C. Chiu, C. H. Lin, T. Y. Wu, Y. S. Chen, P. J. Tzeng, F. Chen, M. J. Kao, M. J. Tsai

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

58 Scopus citations

Abstract

A bipolar resistive switching memory device with a low power operation (200 μA×1.3 V) in a W/Ge_0.4Se_0.6/Cu/Al structure is investigated. A high quality Ge0.4 Se0.6 solid electrolyte is confirmed by X-ray photoelectron spectroscopy. The resistive memory device with a small via size of 0.2 μm has a large threshold voltage of >0.4 V, high resistance ratio (R_high/R_low) of > 10², and good uniformity. The switching mechanisms are due to the Cu metallic filament formation and dissolution from the Ge0.4 Se0.6 solid electrolyte under positive and negative biases, respectively, which have been confirmed by high resolution transmission electron microscopy image and energy-dispersive X-ray spectroscopy analysis. The strong Cu filament formation can also be investigated by monitoring the erase voltage and erase current. Good endurance of > 10⁵ cycles is obtained. Excellent data retention characteristics at 85°C are observed after 24 h of retention time, owing to the strong Cu metallic filament formation in the Ge_0.4Se_0.6 solid electrolyte.

Original language	English
Pages (from-to)	H159-H162
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	5
DOIs	https://doi.org/10.1149/1.3339449
State	Published - 2010

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@article{759408a09d8345d1ac45cef0e8bedfd3,

title = "Bipolar resistive switching memory using cu metallic filament in Ge 0.4Se0.6 solid electrolyte",

abstract = "A bipolar resistive switching memory device with a low power operation (200 μA×1.3 V) in a W/Ge0.4Se0.6/Cu/Al structure is investigated. A high quality Ge0.4 Se0.6 solid electrolyte is confirmed by X-ray photoelectron spectroscopy. The resistive memory device with a small via size of 0.2 μm has a large threshold voltage of >0.4 V, high resistance ratio (Rhigh/Rlow) of > 102, and good uniformity. The switching mechanisms are due to the Cu metallic filament formation and dissolution from the Ge0.4 Se0.6 solid electrolyte under positive and negative biases, respectively, which have been confirmed by high resolution transmission electron microscopy image and energy-dispersive X-ray spectroscopy analysis. The strong Cu filament formation can also be investigated by monitoring the erase voltage and erase current. Good endurance of > 105 cycles is obtained. Excellent data retention characteristics at 85°C are observed after 24 h of retention time, owing to the strong Cu metallic filament formation in the Ge0.4Se0.6 solid electrolyte.",

author = "Rahaman, {S. Z.} and S. Maikap and Chiu, {H. C.} and Lin, {C. H.} and Wu, {T. Y.} and Chen, {Y. S.} and Tzeng, {P. J.} and F. Chen and Kao, {M. J.} and Tsai, {M. J.}",

year = "2010",

doi = "10.1149/1.3339449",

language = "英语",

volume = "13",

pages = "H159--H162",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "5",

}

TY - JOUR

T1 - Bipolar resistive switching memory using cu metallic filament in Ge 0.4Se0.6 solid electrolyte

AU - Rahaman, S. Z.

AU - Maikap, S.

AU - Chiu, H. C.

AU - Lin, C. H.

AU - Wu, T. Y.

AU - Chen, Y. S.

AU - Tzeng, P. J.

AU - Chen, F.

AU - Kao, M. J.

AU - Tsai, M. J.

PY - 2010

Y1 - 2010

N2 - A bipolar resistive switching memory device with a low power operation (200 μA×1.3 V) in a W/Ge0.4Se0.6/Cu/Al structure is investigated. A high quality Ge0.4 Se0.6 solid electrolyte is confirmed by X-ray photoelectron spectroscopy. The resistive memory device with a small via size of 0.2 μm has a large threshold voltage of >0.4 V, high resistance ratio (Rhigh/Rlow) of > 102, and good uniformity. The switching mechanisms are due to the Cu metallic filament formation and dissolution from the Ge0.4 Se0.6 solid electrolyte under positive and negative biases, respectively, which have been confirmed by high resolution transmission electron microscopy image and energy-dispersive X-ray spectroscopy analysis. The strong Cu filament formation can also be investigated by monitoring the erase voltage and erase current. Good endurance of > 105 cycles is obtained. Excellent data retention characteristics at 85°C are observed after 24 h of retention time, owing to the strong Cu metallic filament formation in the Ge0.4Se0.6 solid electrolyte.

AB - A bipolar resistive switching memory device with a low power operation (200 μA×1.3 V) in a W/Ge0.4Se0.6/Cu/Al structure is investigated. A high quality Ge0.4 Se0.6 solid electrolyte is confirmed by X-ray photoelectron spectroscopy. The resistive memory device with a small via size of 0.2 μm has a large threshold voltage of >0.4 V, high resistance ratio (Rhigh/Rlow) of > 102, and good uniformity. The switching mechanisms are due to the Cu metallic filament formation and dissolution from the Ge0.4 Se0.6 solid electrolyte under positive and negative biases, respectively, which have been confirmed by high resolution transmission electron microscopy image and energy-dispersive X-ray spectroscopy analysis. The strong Cu filament formation can also be investigated by monitoring the erase voltage and erase current. Good endurance of > 105 cycles is obtained. Excellent data retention characteristics at 85°C are observed after 24 h of retention time, owing to the strong Cu metallic filament formation in the Ge0.4Se0.6 solid electrolyte.

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U2 - 10.1149/1.3339449

DO - 10.1149/1.3339449

M3 - 文章

AN - SCOPUS:77949671538

SN - 1099-0062

VL - 13

SP - H159-H162

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 5

ER -

Bipolar resistive switching memory using cu metallic filament in Ge _0.4Se_0.6 solid electrolyte

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