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Bi2O2Se-Based Memristor-Aided Logic

  • Bo Liu*
  • , Yudi Zhao
  • , Dharmendra Verma
  • , Le An Wang
  • , Hanyuan Liang
  • , Hui Zhu
  • , Lain Jong Li
  • , Tuo Hung Hou
  • , Chao Sung Lai*
  • *Corresponding author for this work
  • Beijing University of Technology
  • Beijing Information Science & Technology University
  • Chang Gung University
  • Pennsylvania State University
  • The University of Hong Kong
  • National Yang Ming Chiao Tung University

Research output: Contribution to journalJournal Article peer-review

20 Scopus citations

Abstract

The implementation of two-dimensional materials into memristor architectures has recently been a new research focus by taking advantage of their atomic thickness, unique lattice, and physical and electronic properties. Among the van der Waals family, Bi2O2Se is an emerging ternary two-dimensional layered material with ambient stability, suitable band structure, and high conductivity that exhibits high potential for use in electronic applications. In this work, we propose and experimentally demonstrate a Bi2O2Se-based memristor-aided logic. By carefully tuning the electric field polarity of Bi2O2Se through a Pd contact, a reconfigurable NAND gate with zero static power consumption is realized. To provide more knowledge on NAND operation, a kinetic Monte Carlo simulation is carried out. Because the NAND gate is a universal logic gate, cascading additional NAND gates can exhibit versatile logic functions. Therefore, the proposed Bi2O2Se-based MAGIC can be a promising building block for developing next-generation in-memory logic computers with multiple functions.

Original languageEnglish
Pages (from-to)15391-15398
Number of pages8
JournalACS Applied Materials and Interfaces
Volume13
Issue number13
DOIs
StatePublished - 07 04 2021

Bibliographical note

Publisher Copyright:
© 2021 American Chemical Society.

Keywords

  • BiOSe
  • CAFM
  • MAGIC
  • RRAM
  • kinetic Monte Carlo

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