Bi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory application

San Yuan Chen; Chia Liang Sun; Shi Bai Chen; Albert Chin

doi:10.1063/1.1471937

Bi_3.25La_0.75Ti₃O₁₂ thin films on ultrathin Al₂O₃ buffered Si for ferroelectric memory application

San Yuan Chen^*
, Chia Liang Sun
, Shi Bai Chen
, Albert Chin

^*Corresponding author for this work

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

31 Scopus citations

Abstract

We have investigated the physical and electrical properties of Bi _3.25La_0.75Ti₃O₁₂ (BLT) thin films on Pt/Ti/SiO₂/Si and on Al₂O₃(6nm)/Si, which are used for one-transistor-one-capacitor and one-transistor ferroelectric memory, respectively. The BLT thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of 1.6 V at applied ±10 V bias. However, the leakage current of BLT on Al ₂O₃/Si at -100 kV/cm is two orders of magnitude lower than that on Pt. The comparable memory characteristics and much reduced leakage current of BLT on Al₂O₃/Si are the strong advantages as compared with BLT on Pt because it is directly related to switching energy and device scaling down.

Original language	English
Pages (from-to)	3168-3170
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	17
DOIs	https://doi.org/10.1063/1.1471937
State	Published - 29 04 2002
Externally published	Yes

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Cite this

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title = "Bi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory application",

abstract = "We have investigated the physical and electrical properties of Bi 3.25La0.75Ti3O12 (BLT) thin films on Pt/Ti/SiO2/Si and on Al2O3(6nm)/Si, which are used for one-transistor-one-capacitor and one-transistor ferroelectric memory, respectively. The BLT thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of 1.6 V at applied ±10 V bias. However, the leakage current of BLT on Al 2O3/Si at -100 kV/cm is two orders of magnitude lower than that on Pt. The comparable memory characteristics and much reduced leakage current of BLT on Al2O3/Si are the strong advantages as compared with BLT on Pt because it is directly related to switching energy and device scaling down.",

author = "Chen, \{San Yuan\} and Sun, \{Chia Liang\} and Chen, \{Shi Bai\} and Albert Chin",

year = "2002",

month = apr,

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doi = "10.1063/1.1471937",

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T1 - Bi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory application

AU - Chen, San Yuan

AU - Sun, Chia Liang

AU - Chen, Shi Bai

AU - Chin, Albert

PY - 2002/4/29

Y1 - 2002/4/29

N2 - We have investigated the physical and electrical properties of Bi 3.25La0.75Ti3O12 (BLT) thin films on Pt/Ti/SiO2/Si and on Al2O3(6nm)/Si, which are used for one-transistor-one-capacitor and one-transistor ferroelectric memory, respectively. The BLT thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of 1.6 V at applied ±10 V bias. However, the leakage current of BLT on Al 2O3/Si at -100 kV/cm is two orders of magnitude lower than that on Pt. The comparable memory characteristics and much reduced leakage current of BLT on Al2O3/Si are the strong advantages as compared with BLT on Pt because it is directly related to switching energy and device scaling down.

AB - We have investigated the physical and electrical properties of Bi 3.25La0.75Ti3O12 (BLT) thin films on Pt/Ti/SiO2/Si and on Al2O3(6nm)/Si, which are used for one-transistor-one-capacitor and one-transistor ferroelectric memory, respectively. The BLT thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of 1.6 V at applied ±10 V bias. However, the leakage current of BLT on Al 2O3/Si at -100 kV/cm is two orders of magnitude lower than that on Pt. The comparable memory characteristics and much reduced leakage current of BLT on Al2O3/Si are the strong advantages as compared with BLT on Pt because it is directly related to switching energy and device scaling down.

UR - https://www.scopus.com/pages/publications/79956042758

U2 - 10.1063/1.1471937

DO - 10.1063/1.1471937

M3 - 文章

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Bi_3.25La_0.75Ti₃O₁₂ thin films on ultrathin Al₂O₃ buffered Si for ferroelectric memory application

Abstract

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