TY - GEN
T1 - Black's equation for today's ULSI interconnect Electromigration reliability - A revisit
AU - Li, Wei
AU - Tan, Cher Ming
PY - 2011
Y1 - 2011
N2 - Electromigration (EM) is an important failure mechanism in Ultra-Large-Scale Integration (ULSI) interconnections. The Black's equation is a simple empirical EM model, which is widely accepted in the industry as the most common method to extrapolate the median time to failure (MTF) from the accelerated test condition to the normal operating condition. Although the empirical model of the Black's equation is simple in implementation, its validity has been a great controversy in the literature and will be described later. In this work, we revisit the Black's equation for its success in the industry and its validity. In the presence of the additional driving forces and other important Electromigration physics which are not considered in the Black's equation for today ULSI interconnects, the application of the Black's equation for today's ULSI interconnects become inaccurate as shown experimentally. An alternative model based on the physics-based Electromigration simulation and Eyring model in extrapolation is proposed in this work.
AB - Electromigration (EM) is an important failure mechanism in Ultra-Large-Scale Integration (ULSI) interconnections. The Black's equation is a simple empirical EM model, which is widely accepted in the industry as the most common method to extrapolate the median time to failure (MTF) from the accelerated test condition to the normal operating condition. Although the empirical model of the Black's equation is simple in implementation, its validity has been a great controversy in the literature and will be described later. In this work, we revisit the Black's equation for its success in the industry and its validity. In the presence of the additional driving forces and other important Electromigration physics which are not considered in the Black's equation for today ULSI interconnects, the application of the Black's equation for today's ULSI interconnects become inaccurate as shown experimentally. An alternative model based on the physics-based Electromigration simulation and Eyring model in extrapolation is proposed in this work.
UR - https://www.scopus.com/pages/publications/84862932348
U2 - 10.1109/EDSSC.2011.6117717
DO - 10.1109/EDSSC.2011.6117717
M3 - 会议稿件
AN - SCOPUS:84862932348
SN - 9781457719974
T3 - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
BT - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
T2 - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
Y2 - 17 November 2011 through 18 November 2011
ER -